High performance 2 × 2 polymeric electro-optic switch with modified bifurcation optically active waveguide structure

1996 ◽  
Vol 32 (21) ◽  
pp. 1994 ◽  
Author(s):  
Seon Gyu Han ◽  
Hyuck Jae Lee ◽  
Myung-Hyun Lee ◽  
Hyung Jong Lee ◽  
Hye-Young Kim ◽  
...  
Keyword(s):  
High Performance ◽  
Waveguide Structure ◽  
Optically Active ◽  
Electro Optic ◽  
Active Waveguide

scholarly journals High-Performance Electro-Optic Manipulation by Plasmonic Light Absorber with Nano-Cavity Field Confinement

2021 ◽  
pp. 1-1
Author(s):  
Guiqiang Liu ◽  
Qizhao Wu ◽  
Xiaoshan Liu ◽  
Xuefeng Zhan ◽  
Guolan Fu ◽  
...  
Keyword(s):  
High Performance ◽  
Cavity Field ◽  
Light Absorber ◽  
Electro Optic

Effects of the dispersion of zirconium dioxide nanoparticles on high performance electro-optic properties in liquid crystal devices

2011 ◽  
Vol 38 (7) ◽  
pp. 871-875 ◽  
Author(s):  
Hyung-Jun Kim ◽  
Young-Gu Kang ◽  
Hong-Gyu Park ◽  
Kang-Min Lee ◽  
Seok Yang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Zirconium Dioxide ◽  
High Performance ◽  
Liquid Crystal Devices ◽  
Electro Optic ◽  
Zirconium Dioxide Nanoparticles

High-performance terahertz electro-optic detector

2004 ◽  
Vol 40 (12) ◽  
pp. 763 ◽  
Author(s):  
J. Kröll ◽  
J. Darmo ◽  
K. Unterrainer
Keyword(s):  
High Performance ◽  
Electro Optic

scholarly journals Silicon Quantum Dot Light Emitting Diode at 620 nm

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Optically Active ◽  
Driving Voltage ◽  
Device Structure ◽  
Light Emitting ◽  
Naked Eye ◽  
Turn On ◽  
Silicon Quantum Dot

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

High performance electro-optic polymer waveguide device

1997 ◽  
Vol 71 (26) ◽  
pp. 3779-3781 ◽  
Author(s):  
Hyang-Mok Lee ◽  
Wol-Yon Hwang ◽  
Min-Cheol Oh ◽  
Heuk Park ◽  
Taehyoung Zyung ◽  
...  
Keyword(s):  
High Performance ◽  
Polymer Waveguide ◽  
Electro Optic ◽  
Waveguide Device

Highly sensitive electro-optic sampling of terahertz waves using field enhancement in a tapered waveguide structure

2014 ◽  
Vol 7 (11) ◽  
pp. 112401 ◽  
Author(s):  
Satoshi Tsuzuki ◽  
Daiki Takeshima ◽  
Tomoya Sakon ◽  
Tetsuya Kinoshita ◽  
Tomohiro Nagase ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Waveguide Structure ◽  
Terahertz Waves ◽  
Electro Optic ◽  
Tapered Waveguide ◽  
Highly Sensitive
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