Simple backgated MOSFET structure for dynamic threshold control in fully depleted SOI CMOS

1996 ◽  
Vol 32 (12) ◽  
pp. 1093 ◽  
Author(s):  
N.G. Tarr ◽  
R. Soreefan ◽  
T.W. MacElwee ◽  
W.M. Snelgrove ◽  
S. Bazarjani
Keyword(s):  
Dynamic Threshold ◽  
Threshold Control ◽  
Fully Depleted ◽  
Soi Cmos

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

scholarly journals A comparison of fully depleted SOI-CMOS transistors in FIPOS and SIMOX substrates

2003 ◽  
Author(s):  
N.J. Thomas ◽  
J.R. Davis ◽  
K.J. Reeson ◽  
P.L.F. Hemment ◽  
J. Keen ◽  
...  
Keyword(s):  
Fully Depleted ◽  
Cmos Transistors ◽  
Soi Cmos

RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

2003 ◽  
Vol 24 (4) ◽  
pp. 251-253 ◽  
Author(s):  
Sang Lam ◽  
Hui Wan ◽  
Pin Su ◽  
P.W. Wyatt ◽  
C.L. Chen ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Fully Depleted ◽  
Gate Structure ◽  
Soi Cmos
Sign in / Sign up

Export Citation Format

Share Document