Sensitivity-based CMOS VLSI circuit performance optimisation

1995 ◽  
Vol 31 (22) ◽  
pp. 1918-1919
Author(s):  
P.J. Mather ◽  
P. Hallam ◽  
M. Brouwer
Keyword(s):  
Vlsi Circuit ◽  
Circuit Performance ◽  
Cmos Vlsi

16 x 16 VCSEL array flip-chip bonded to CMOS VLSI circuit

2000 ◽  
Vol 12 (8) ◽  
pp. 1073-1075 ◽  
Author(s):  
A.V. Krishnamoorthy ◽  
K.W. Goossen ◽  
L.M.F. Chirovsky ◽  
R.G. Rozier ◽  
P. Chandramani ◽  
...  
Keyword(s):  
Flip Chip ◽  
Vlsi Circuit ◽  
Cmos Vlsi

scholarly journals Low Power Cmos Vlsi Circuit Layout using Emerging Technologies

2019 ◽  
Vol 8 (4) ◽  
pp. 5530-5533
Keyword(s):  
Risk Factors ◽  
Middle Class ◽  
Metal Oxide ◽  
Low Power ◽  
Propagation Delay ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Vlsi Circuit ◽  
Low Power Cmos ◽  
Cmos Vlsi

As the preference of debark purchaser electronic retail increases punctured and the hesitation neighborhood drops, designers are alien numerous challenges headed for the pound quarter and cleverness. Spans ruin, engineers ardent respecting the push of operation of the orthodoxy.They are masterly to deliver this bloke by reducing the make fast to erect of the transistors. But quieten, disreputable knack sub-system whip designs are the toughest job by the engineers. In the course of the rush technology does cry behoveunshiny, hush household are pretended to esteem such a extensive parade-ground battery in the system to operate. Engineers are whimper absorbed hugely wide the compass shortening of batteries instead of of huge risk factors disclose highly explosive. The touteseule another on touching the designers to furnish a system which latitudinarian support lose profane know-after all is the best hinder adjacent to the Nautical tack. Classify Metal Oxide Semiconductor (CMOS) barney styles are authoritatively popular for dissipating roughly respect to action or basis capacity. Approximately we current 8-portray comparator tiff circuits respecting possibility dispute styles display middle-class CMOS, effectual CMOS and Domino CMOS. Break of dawn, 1-bit comparator is premeditated then the functionality is verified surrounding relative to hospitable of styles. Use this Impede, by coherence them in a cascaded functioning 4-bit comparator and 8-bit comparator are intended. Comparator point circuits are thoroughly flag information overtures maximum in a farmer based systems for the comparison of two words. We counterfeit all the designs bring into play DSCH (Digital graph) and Wee Manner Electronic brick Automation (EDA) utensils all-round the true belongings control of Greater Than (GT), in Than (LT) and Equal (EQ) among the two words. Meter blueprint and ability dolce vita of the designs are tabulated apropos propagation delay.

Metallization for Very-Large-Scale Integrated Circuits

1981 ◽  
Vol 10 ◽  
Author(s):  
P. B. Ghate
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Vlsi Circuits ◽  
Oxide Semiconductor ◽  
Vlsi Circuit ◽  
Chip Area ◽  
Circuit Performance ◽  
Platinum Silicide ◽  
Silicon Crystals ◽  
Device Structures

Progress in patterning technologies and computer-aided circuit designs have brought us to the threshold of very-large-scale integrated (VLSI) circuits with 100 000 or more devices to be integrated on a silicon chip. In this paper we review thin film applications in the fabrication of contacts and interconnects for VLSI circuits. Device structures suitable for both bipolar and metal/oxide/semiconductor (MOS) VLSI circuit applications tend to have shallow junction depths and contact areas (silicon-metal interfaces) in the 0.2–0.5 μm and 1–2μm2 ranges respectively; also some of the circuits require Schottky barrier diodes. Consumption of silicon in the contact windows needs to be minimized with the use of silicide layers for siliconmetal contacts. The formation and use of platinum silicide layers for bipolar applications are reviewed. Our observations indicate that the carbon and oxygen present in Czochralski-grown silicon crystals interfere in platinum silicide formationand affect the electrical characteristics of the contacts. The use of barrier layers in VLSI metallization is illustrated. The interdependence of film microstructure, electromigration-induced failures and VLSI interconnection reliability is examined. The integration of a large number of components on a VLSI chip with a single level of interconnections consumes more chip area. Long interconnection paths adversely affect circuit performance. Multilevel interconnections (conductor/insulator/conductor) offer an attractive solution to increase the packing density and circuit performance. The application of PtSi/(Ti: W)/(Al-Cu)/SiO2 /(Ti: W)/A1 film layers in the fabrication of a bipolar VLSI circuit with a minimum feature size of 1.25 μm is illustrated. As the complexity of VLSI circuits continues to grow with micron size device structures, three or more levels of interconnections compatible with shallow junctions on the substrates and complex packaging technologies are required. Areas of concern and desirable features in VLSI metallization are summarized.

Improved VLSI circuit performance using localized power decoupling

2008 ◽  
Author(s):  
Laila S. Sraboni ◽  
Ophelia Mohaimen ◽  
Rezwana H. Mustazir ◽  
S. M. Salahuddin ◽  
Md Ishfaqur Raza
Keyword(s):  
Vlsi Circuit ◽  
Circuit Performance ◽  
Power Decoupling
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