Fabrication technique for Si single-electron transistor operating at room temperature

Y. Takahashi; K. Iwdate; M. Nagase; K. Murase; S. Horiguchi; K. Kurihara; Y. Nakajima; H. Namatsu; M. Tabe

doi:10.1049/el:19950082

Fabrication technique for Si single-electron transistor operating at room temperature

Electronics Letters ◽

10.1049/el:19950082 ◽

1995 ◽

Vol 31 (2) ◽

pp. 136-137 ◽

Cited By ~ 256

Author(s):

Y. Takahashi ◽

K. Iwdate ◽

M. Nagase ◽

K. Murase ◽

S. Horiguchi ◽

...

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Fabrication Technique

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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2086475 ◽

2011 ◽

Vol 10 (1) ◽

pp. 96-98 ◽

Cited By ~ 23

Author(s):

Yongshun Sun ◽

Rusli ◽

Navab Singh

Keyword(s):

Room Temperature ◽

Optical Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Applied Physics Letters ◽

10.1063/1.1894594 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123118 ◽

Cited By ~ 30

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

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Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.5724 ◽

2008 ◽

Vol 47 (7) ◽

pp. 5724-5726 ◽

Cited By ~ 7

Author(s):

Masatoshi Maeda ◽

Shin Iwasaki ◽

Takafumi Kamimura ◽

Katsuyuki Murata ◽

Kazuhiko Matsumoto

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.115202 ◽

2010 ◽

Vol 49 (11) ◽

pp. 115202 ◽

Cited By ~ 2

Author(s):

Joung-Eob Lee ◽

Garam Kim ◽

Kim Kyung Wan ◽

Won Bo Shim ◽

Jung-Han Lee ◽

...

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Channel Structure ◽

Single Electron ◽

Single Electron Transistor ◽

Recessed Channel ◽

Room Temperature Operation

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Conductance oscillations of a Si single electron transistor at room temperature

Proceedings of 1994 IEEE International Electron Devices Meeting ◽

10.1109/iedm.1994.383257 ◽

2002 ◽

Cited By ~ 17

Author(s):

Y. Takahashi ◽

M. Nagase ◽

H. Namatsu ◽

K. Kurihara ◽

K. Iwdate ◽

...

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Focused Ion Beam Fabrication of Sub-20nm Inter-Electrode Gaps for Room Temperature Operating Single Electron Transistor

2008 8th IEEE Conference on Nanotechnology ◽

10.1109/nano.2008.17 ◽

2008 ◽

Author(s):

Manoranjan Acharya ◽

P. Santosh Kumar Karre ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistor ◽

Temperature Operating

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Room-temperature Al single-electron transistor made by electron-beam lithography

Applied Physics Letters ◽

10.1063/1.126313 ◽

2000 ◽

Vol 76 (16) ◽

pp. 2256-2258 ◽

Cited By ~ 74

Author(s):

Yu. A. Pashkin ◽

Y. Nakamura ◽

J. S. Tsai

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Single Electron Transistor-Based Gas Sensing With Tungsten Nanoparticles at Room Temperature

IEEE Sensors Journal ◽

10.1109/jsen.2008.923224 ◽

2008 ◽

Vol 8 (6) ◽

pp. 797-802 ◽

Cited By ~ 16

Author(s):

P. Santosh Kumar Karre ◽

Manoranjan Acharya ◽

William R. Knudsen ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Gas Sensing ◽

Single Electron ◽

Single Electron Transistor ◽

Tungsten Nanoparticles

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Room temperature double gate single electron transistor based standard cell library

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures - NANOARCH '12 ◽

10.1145/2765491.2765518 ◽

2012 ◽

Cited By ~ 4

Author(s):

Mohamed Amine Bounouar ◽

Arnaud Beaumont ◽

Khalil El Hajjam ◽

Francis Calmon ◽

Dominique Drouin

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Double Gate ◽

Standard Cell ◽

Standard Cell Library ◽

Cell Library

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Room temperature single electron transistor based on a size-selected aluminium cluster

Nanoscale ◽

10.1039/c9nr09467a ◽

2020 ◽

Vol 12 (2) ◽

pp. 1164-1170

Author(s):

Vyacheslav S. Zharinov ◽

Thomas Picot ◽

Jeroen E. Scheerder ◽

Ewald Janssens ◽

Joris Van de Vondel

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

We developed a novel two-point contacting approach to atomically controlled single nano-objects under pristine conditions. This technique is used to realize SET devices.

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