Room-temperature Al single-electron transistor made by electron-beam lithography

Yu. A. Pashkin; Y. Nakamura; J. S. Tsai

doi:10.1063/1.126313

Room-temperature Al single-electron transistor made by electron-beam lithography

Applied Physics Letters ◽

10.1063/1.126313 ◽

2000 ◽

Vol 76 (16) ◽

pp. 2256-2258 ◽

Cited By ~ 74

Author(s):

Yu. A. Pashkin ◽

Y. Nakamura ◽

J. S. Tsai

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Room temperature operated single electron transistor fabricated by electron beam nanolithography

Microelectronic Engineering ◽

10.1016/s0167-9317(96)00093-7 ◽

1997 ◽

Vol 35 (1-4) ◽

pp. 261-264 ◽

Cited By ~ 10

Author(s):

K. Kurihara ◽

H. Namatsu ◽

M. Nagase ◽

T. Makino

Keyword(s):

Electron Beam ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2003.814175 ◽

2003 ◽

Vol 13 (2) ◽

pp. 1139-1142 ◽

Cited By ~ 1

Author(s):

T.R. Stevenson ◽

Wen-Ting Hsieh ◽

M.J. Li ◽

K.W. Rhee ◽

R.J. Schoelkopf ◽

...

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Tunnel Junctions ◽

Single Electron ◽

Single Electron Transistor ◽

Detector Arrays ◽

Direct Detector

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Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography

Applied Physics Letters ◽

10.1063/1.1360778 ◽

2001 ◽

Vol 78 (14) ◽

pp. 2070-2072 ◽

Cited By ~ 14

Author(s):

K. Nishiguchi ◽

S. Oda

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Double Gate

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Titanium single-electron transistor fabricated by electron-beam lithography

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(01)00491-x ◽

2002 ◽

Vol 15 (1) ◽

pp. 41-47 ◽

Cited By ~ 5

Author(s):

Mika A. Sillanpää ◽

Pertti J. Hakonen

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Single Electron ◽

Single Electron Transistor

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Proximity effect of electron beam lithography for single-electron transistor fabrication

Applied Physics Letters ◽

10.1063/1.1811803 ◽

2004 ◽

Vol 85 (17) ◽

pp. 3893-3895 ◽

Cited By ~ 2

Author(s):

Shu-Fen Hu ◽

Chin-Lung Sung ◽

Kuo-Dong Huang ◽

Yue-Min Wan

Keyword(s):

Electron Beam ◽

Proximity Effect ◽

Electron Beam Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Transistor Fabrication

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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2086475 ◽

2011 ◽

Vol 10 (1) ◽

pp. 96-98 ◽

Cited By ~ 23

Author(s):

Yongshun Sun ◽

Rusli ◽

Navab Singh

Keyword(s):

Room Temperature ◽

Optical Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Applied Physics Letters ◽

10.1063/1.1894594 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123118 ◽

Cited By ~ 30

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

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Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.5724 ◽

2008 ◽

Vol 47 (7) ◽

pp. 5724-5726 ◽

Cited By ~ 7

Author(s):

Masatoshi Maeda ◽

Shin Iwasaki ◽

Takafumi Kamimura ◽

Katsuyuki Murata ◽

Kazuhiko Matsumoto

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.115202 ◽

2010 ◽

Vol 49 (11) ◽

pp. 115202 ◽

Cited By ~ 2

Author(s):

Joung-Eob Lee ◽

Garam Kim ◽

Kim Kyung Wan ◽

Won Bo Shim ◽

Jung-Han Lee ◽

...

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Channel Structure ◽

Single Electron ◽

Single Electron Transistor ◽

Recessed Channel ◽

Room Temperature Operation

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Conductance oscillations of a Si single electron transistor at room temperature

Proceedings of 1994 IEEE International Electron Devices Meeting ◽

10.1109/iedm.1994.383257 ◽

2002 ◽

Cited By ~ 17

Author(s):

Y. Takahashi ◽

M. Nagase ◽

H. Namatsu ◽

K. Kurihara ◽

K. Iwdate ◽

...

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor

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