Novel coplanar waveguide to slotline transition on high resistivity silicon

1992 ◽  
Vol 28 (24) ◽  
pp. 2209 ◽  
Author(s):  
R.N. Simons ◽  
S.R. Taub ◽  
P.G. Young
Keyword(s):  
Coplanar Waveguide ◽  
High Resistivity ◽  
High Resistivity Silicon

Photo-induced millimeter wave losses in coplanar waveguide on high resistivity silicon

2007 ◽  
Vol 49 (4) ◽  
pp. 808-810 ◽  
Author(s):  
G. Poesen ◽  
G. Koers ◽  
J. Stiens ◽  
G. Carchon ◽  
W. De Raedt ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
High Resistivity ◽  
High Resistivity Silicon

scholarly journals RF MEMS ohmic switches for matrix configurations

2012 ◽  
Vol 4 (4) ◽  
pp. 421-433 ◽  
Author(s):  
Giorgio De Angelis ◽  
Andrea Lucibello ◽  
Emanuela Proietti ◽  
Romolo Marcelli ◽  
Giancarlo Bartolucci ◽  
...  
Keyword(s):  
Rf Mems ◽  
Coplanar Waveguide ◽  
Building Blocks ◽  
Micro Electro Mechanical System ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Double Pole ◽  
Rf Test ◽  
Clamped Beams ◽  
High Resistivity Silicon

Two different topologies of radio frequency micro-electro-mechanical system (RF MEMS) series ohmic switches (cantilever and clamped–clamped beams) in coplanar waveguide (CPW) configuration have been characterized by means of DC, environmental, and RF measurements. In particular, on-wafer checks have been followed by RF test after vibration, thermal shocks, and temperature cycles. The devices have been manufactured on high resistivity silicon substrates, as building blocks to be implemented in different single-pole 4-throw (SP4 T), double-pole double-throw (DPDT) configurations, and then integrated in Low Temperature Co-fired Ceramics (LTCC) technology for the realization of large-order Clos 3D networks.

Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies

2020 ◽  
Vol 12 (7) ◽  
pp. 615-628
Author(s):  
Lucas Nyssens ◽  
Martin Rack ◽  
Jean-Pierre Raskin
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
Characteristic Impedance ◽  
Wave Radiation ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Dielectric Losses ◽  
Effective Resistivity ◽  
Novel Method ◽  
High Resistivity Silicon

AbstractThe effective resistivity (ρeff) is a figure of merit commonly used to assess the radio-frequency performance of a substrate from the measurements of coplanar waveguide lines. For highly resistive substrates, such as the trap-rich (TR) substrate, the extracted ρeff decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the imaginary part of the characteristic impedance ${\rm \lpar \Im }\lpar Z_c\rpar \rpar$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. Second, the original expression of ρeff does not include dielectric losses, which might become non-negligible at millimeter-wave frequencies. This paper solves both issues by presenting a new procedure to extract ρeff and the dielectric losses simultaneously, and by introducing a novel method to correct ${\rm \Im }\lpar {Z_c} \rpar$. Furthermore, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz of TR and high-resistivity silicon substrates. Finally, the origin of the large extracted value of dielectric loss is discussed in the potential presence of surface roughness and surface wave radiation. Both phenomena are discounted thanks to measurements of an additional reflective structure and a standard impedance substrate.

A Ku-band RF-MEMS frequency-reconfigurable multimodal bandpass filter

2014 ◽  
Vol 6 (3-4) ◽  
pp. 277-285 ◽  
Author(s):  
Adrián Contreras ◽  
Jasmina Casals-Terré ◽  
Lluís Pradell ◽  
Flavio Giacomozzi ◽  
Jacopo Iannacci ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Center Frequency ◽  
High Resistivity ◽  
Quarter Wavelength ◽  
Relative Bandwidth ◽  
Insertion Losses ◽  
High Resistivity Silicon ◽  
Ku Band

In this paper, a uniplanar RF-MEMS second-order bandpass filter with reconfigurable center frequency is presented. It is based on quarter-wavelength slotline resonators and coplanar waveguide (CPW)-to-slotline multimodal immitance inverters (MIIs), which are reconfigured using RF-MEMS switchable CPW air-bridges (SABs). The filter can be adequately explained and designed using multimodal theory and circuit models. A surface micromachining process on high-resistivity silicon substrate was used to fabricate the filter. Experimental results show frequency reconfiguration from 12 to 13 GHz, maintaining the same relative bandwidth, and insertion losses of 4.6 and 4.7 dB, respectively.

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

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