High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulators

1991 ◽  
Vol 27 (23) ◽  
pp. 2162 ◽  
Author(s):  
I. Kotaka ◽  
K. Wakita ◽  
K. Kawano ◽  
M. Asai ◽  
M. Naganuma
Keyword(s):  
High Speed ◽  
Driving Voltage ◽  
Optical Modulators ◽  
Multiquantum Well

InGaAs/InP Multiquantum well Structures Grown by Trichloride Vapor Phase Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
K. W. Wang ◽  
V. D. Mattera ◽  
K. Tai ◽  
S. N. G. Chu ◽  
D. D. Roccasecca ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Stark Effect ◽  
Optical Modulators ◽  
Double Crystal ◽  
Cross Sectional ◽  
High Modulation ◽  
Transmission Electron ◽  
Device Applications ◽  
Multiquantum Well

AbstractLong wavelength (l.3pm<X<l.551un) InGaAs/InP multiquantum well (MQW) PIN structures in which the quantum confined Stark effect can be observed, are of particular interest because of their potential for high modulation contrast ratios and high speed operation. The chemistry of trichloride VPE lends itself to the growth of high purity InGaAsP heterostructures which are essential for the realization of high performance optical modulators and switches. In this study, we investigate the application of multi-frit trichloride VPE for the highly uniform epitaxial growth of InGaAs/InP MQW structures on two-inch InP substrates for advanced photonic device applications. The growth of MQW structures with various well thicknesses was studied as was the effect of substrate orientation. The structures have been characterized by infrared absorption and photoluminescence spectroscopy, cross-sectional transmission electron microscopy and double crystal x-ray diffraction.

Ultralow chirp and high-speed 1.55 mu m multiquantum well lambda /4-shifted DFB lasers

1990 ◽  
Vol 2 (4) ◽  
pp. 229-230 ◽  
Author(s):  
K. Uomi ◽  
S. Sasaki ◽  
T. Tsuchiya ◽  
H. Nakano ◽  
N. Chinone
Keyword(s):  
High Speed ◽  
Multiquantum Well

scholarly journals High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

2014 ◽  
Vol 2 ◽  
Author(s):  
Graham T. Reed ◽  
David J. Thomson ◽  
Frederic Y. Gardes ◽  
Youfang Hu ◽  
Jean-Marc Fedeli ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Modulators ◽  
Pn Junctions

scholarly journals Line of Sight Correction of High-Speed Liquid Crystal Using Overdriving Technology

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1477
Author(s):  
Hongyang Guo ◽  
Qing Li ◽  
Yangjie Xu ◽  
Yongmei Huang ◽  
Shengping Du
Keyword(s):  
Liquid Crystal ◽  
Response Time ◽  
High Speed ◽  
Pulse Width Modulation ◽  
Response Speed ◽  
Line Of Sight ◽  
Processing Unit ◽  
Driving Voltage ◽  
Light Modulator ◽  
Central Processing

In the line of sight correction system, the response time of the liquid crystal spatial light modulator under the normal driving voltage is too long to affect system performance. On the issues, an overdriving method based on a Field-Programmable Gate Array (FPGA) is established. The principle of the overdrive is to use a higher voltage difference to achieve a faster response speed of liquid crystal. In this scheme, the overdriving look-up table is used to seek the response time of the quantized phase, and the liquid crystal electrode is driven by Pulse–Width Modulation (PWM). All the processes are performed in FPGA, which releases the central processing unit (CPU) memory and responds faster. Adequate simulations and experiments are introduced to demonstrate the proposed method. The overdriving experiment shows that the rising response time is reduced from 530 ms to 34 ms, and the falling time is from 360 ms to 38 ms under the overdriving voltage. Typical light tracks are imitated to evaluate the performance of the line of sight correction platform. Results show that using the overdrive the −3 dB rejection frequency was increased from 1.1 Hz to 2.6 Hz. The suppression ability of the overdrive is about −20 dB at 0.1 Hz, however the normal-driving suppression ability is only about −13 dB.

High Speed Metal–Oxide–Semiconductor Capacitor-Based Silicon Optical Modulators

2006 ◽  
Vol 45 (8B) ◽  
pp. 6603-6608 ◽  
Author(s):  
Ling Liao ◽  
Dean Samara-Rubio ◽  
Ansheng Liu ◽  
Doron Rubin ◽  
Ulrich D. Keil ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulators ◽  
Metal Oxide Semiconductor Capacitor

Design optimization of high-speed optical modulators

2006 ◽  
Author(s):  
B. M. A. Rahman ◽  
Shyqyri Haxha ◽  
Vesel Haxha ◽  
Kenneth T. V. Grattan
Keyword(s):  
Design Optimization ◽  
High Speed ◽  
Optical Modulators

High Speed Silicon optical modulators

2011 ◽  
Author(s):  
G. T. Reed ◽  
D. Thomson ◽  
F. Y. Gardes ◽  
N G Emerson ◽  
J-M. Fédéli.
Keyword(s):  
High Speed ◽  
Optical Modulators

Microwave signal processing using high speed silicon optical modulators

2016 ◽  
Author(s):  
Linjie Zhou ◽  
Yanyang Zhou ◽  
Minjuan Wang ◽  
Yiming Zhong ◽  
Yujie Xia ◽  
...  
Keyword(s):  
Signal Processing ◽  
High Speed ◽  
Microwave Signal ◽  
Optical Modulators
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