Fabrication of periodically reversed domain structure for SHG in LiNbO3, by direct electron beam lithography at room temperature

1991 ◽  
Vol 27 (10) ◽  
pp. 828-829 ◽  
Author(s):  
M. Yamada ◽  
K. Kishima
Keyword(s):  
Electron Beam ◽  
Domain Structure ◽  
Electron Beam Lithography ◽  
Room Temperature

Transport in Thermal Dip Pen Nanolithography

2004 ◽  
Author(s):  
Brent A. Nelson ◽  
Tanya L. Wright ◽  
William P. King ◽  
Paul E. Sheehan ◽  
Lloyd J. Whitman
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Optical Lithography ◽  
Ambient Conditions ◽  
Atomic Force ◽  
Resolution Limits ◽  
Dip Pen Nanolithography

The manufacture of nanoscale devices is at present constrained by the resolution limits of optical lithography and the high cost of electron beam lithography. Furthermore, traditional silicon fabrication techniques are quite limited in materials compatibility and are not well-suited for the manufacture of organic and biological devices. One nanomanufacturing technique that could overcome these drawbacks is dip pen nanolithography (DPN), in which a chemical-coated atomic force microscope (AFM) tip deposits molecular ‘inks’ onto a substrate [1]. DPN has shown resolution as good as 5 nm [2] and has been performed with a large number of molecules, but has limitations. For molecules to ink the surface they must be mobile at room temperature, limiting the inks that can be used, and since the inks must be mobile in ambient conditions, there is no way to stop the deposition while the tip is in contact with the substrate. In-situ imaging of deposited molecules therefore causes contamination of the deposited features.

Tem Observation of the Damages in Heavily Ion-Implanted Fine Si Columns

1994 ◽  
Vol 354 ◽  
Author(s):  
S. Shingubara ◽  
H. Sukesako ◽  
T. Kawasaki ◽  
K. Inoue ◽  
Y. Matusi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Heavy Ion ◽  
Single Crystal Substrate ◽  
Lattice Image ◽  
Quantum Size ◽  
Crystal Substrate ◽  
Heavy Doping

AbstractSi nanometer structures are promising for exhibiting the quantum size effect at temperatures even as high as a room temperature. The present work investigates by TEM the damages induced by a heavy ion-implantation to the fine Si columns, aim of fabrication of 1-D tunneling PN diode in future. Si columns are fabricated by electron beam lithography and reactive ion etching, followed by thinning by thermal oxidation of Si . Ultra fine Si column with a diameter of 8 nm are successfully formed. TEM lattice image observations for fine Si columns, which are subject to ion-implantation and subsequent annealing, are carried out. In the case of heavy doping of As, as well as BF2, as-doped structure is amorphous, and recrystallization is observed after annealing at 1000 °C for 30 min. Typical damages such as dislocations which are parallel to the {111} planes and Si micro-crystals which are differently oriented from the Si single crystal substrate are observed for Si columns with diameters larger than 40nm. However, it should be noted that no damage is observed for fine Si columns with diameters less than 20nm. It is suggested that defects are diffused out to the surface or the Si/SiO2 interface for ultra fine Si columns during annealing.

scholarly journals Room Temperature Direct Electron Beam Lithography in a Condensed Copper Carboxylate

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 580
Author(s):  
Luisa Berger ◽  
Jakub Jurczyk ◽  
Katarzyna Madajska ◽  
Iwona B. Szymańska ◽  
Patrik Hoffmann ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Metallic Nanostructures ◽  
Direct Write ◽  
Combined Approach ◽  
New Approach ◽  
Condensed Copper ◽  
Purification Protocol

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

Optimization of the Display Parameters of a Room Temperature Nematic Material (6CHBT) by Using Electron Beam Irradiation

2010 ◽  
Vol 6 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Rohit Verma ◽  
Ravindra Dhar ◽  
M. C. Rath ◽  
Sisir K. Sarkar ◽  
V. K. Wadhawan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Beam Irradiation
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