Polarity dependence of charge to breakdown and interface state generation of oxynitride gate dielectrics prepared by rapid thermal processing

1990 ◽  
Vol 26 (21) ◽  
pp. 1741
Author(s):  
A.B. Joshi ◽  
G.Q. Lo ◽  
D.L. Kwong ◽  
J. Xie
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Interface State ◽  
State Generation

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

1990 ◽  
Vol 11 (11) ◽  
pp. 511-513 ◽  
Author(s):  
G.Q. Lo ◽  
W. Ting ◽  
D.-L. Kwong ◽  
J. Kuehne ◽  
C.W. Magee
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing
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