Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

C. Kazmierski; M. Blez; M. Quillec; M. Allovon; B. Sermage

doi:10.1049/el:19900581

Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19900581 ◽

1990 ◽

Vol 26 (13) ◽

pp. 889 ◽

Cited By ~ 18

Author(s):

C. Kazmierski ◽

M. Blez ◽

M. Quillec ◽

M. Allovon ◽

B. Sermage

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Ridge Structure ◽

Low Threshold

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Cited By ~ 7

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Cited By ~ 20

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

Low Threshold

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Cited By ~ 45

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Low Threshold

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

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Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/lpt.2005.846567 ◽

2005 ◽

Vol 17 (6) ◽

pp. 1142-1144 ◽

Cited By ~ 3

Author(s):

A. Hierro ◽

J.M. Ulloa ◽

E. Calleja ◽

B. Damilano ◽

J. Barjon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Temperature Performance ◽

Low Threshold

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Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Electronics Letters ◽

10.1049/el:19990746 ◽

1999 ◽

Vol 35 (13) ◽

pp. 1081 ◽

Cited By ~ 17

Author(s):

X. Yang ◽

M.J. Jurkovic ◽

J.B. Heroux ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-Threshold $\bf 1.3\,\mbi{\mu}m$ Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l634 ◽

1996 ◽

Vol 35 (Part 2, No. 5B) ◽

pp. L634-L636 ◽

Cited By ~ 4

Author(s):

Mika Toivonen ◽

Pekka Savolainen ◽

Harry Asonen ◽

Richard Murison

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Strained Layer ◽

Low Threshold ◽

Multi Quantum Well

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Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20020932 ◽

2002 ◽

Vol 38 (22) ◽

pp. 1354 ◽

Cited By ~ 15

Author(s):

Po-Wei Liu ◽

Ming-Han Lee ◽

Hao-Hsiung Lin ◽

Jhe-Ren Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Threshold Current ◽

Quantum Well Lasers ◽

Low Threshold

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Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19920902 ◽

1992 ◽

Vol 28 (15) ◽

pp. 1419 ◽

Cited By ~ 7

Author(s):

T. Takamori ◽

K. Watanabe ◽

T. Kamijoh

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Laser ◽

Low Threshold ◽

Strained Quantum Well ◽

Current Blocking

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