High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure

1989 ◽  
Vol 25 (2) ◽  
pp. 85 ◽  
Author(s):  
J.K. Twynam ◽  
P.A. Claxton ◽  
R.C. Woods ◽  
D.R. Wight
Keyword(s):  
High Gain ◽  
Ring Structure ◽  
Guard Ring

Erratum: High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure

1989 ◽  
Vol 25 (4) ◽  
pp. 296
Author(s):  
J.K. Twynam ◽  
P.A. Claxton ◽  
R.C. Woods ◽  
D.R. Wight
Keyword(s):  
High Gain ◽  
Ring Structure ◽  
Guard Ring

Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

2013 ◽  
Vol 34 (3) ◽  
pp. 336-338 ◽  
Author(s):  
Woo-Suk Sul ◽  
Chae-Hun Lee ◽  
Gyu-Seong Cho
Keyword(s):  
Ring Structure ◽  
Guard Ring ◽  
Dark Count ◽  
Silicon Photomultipliers

Reduction of the dead region for edge on strip detector by a guard ring structure

2003 ◽  
Vol 50 (2) ◽  
pp. 537-540
Author(s):  
Dejun Han ◽  
Chuanmin Wang ◽  
Guangfu Wang ◽  
Shuchen Du ◽  
Liyan Shen ◽  
...  
Keyword(s):  
Ring Structure ◽  
Guard Ring ◽  
Strip Detector ◽  
The Dead

Study and characterization of plastic encapsulated package for a three-axis piezoresistive acceleromete with guard-ring structure

2012 ◽  
Author(s):  
Hsieh-Shen Hsieh ◽  
Heng-Chung Chang ◽  
Chih-Fan Hu ◽  
Chao-Lin Cheng ◽  
Weileun Fang
Keyword(s):  
Ring Structure ◽  
Guard Ring

Excess noise, gain, and dark current in Ge avalanche photodiodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1070-1075
Author(s):  
D. Scansen ◽  
S. O. Kasap
Keyword(s):  
Activation Energy ◽  
Dark Current ◽  
Low Frequency ◽  
Ring Structure ◽  
Noise Factor ◽  
Excess Noise ◽  
Guard Ring ◽  
Excess Noise Factor ◽  
Wide Range ◽  
Current Activation

Measurements have been carried out on a p+ n type Ge avalanche photodiode (typical guard ring structure with channel stoppers) to obtain the excess noise factor, F; multiplication, M; and the dark current, Id over a wide range of temperatures (143–323 K). The multiplication initially increases with the illumination wavelength and peaks in the 1550 nm region because of more holes being injected into the avalanche region as the absorption depth becomes much longer than the width of the p+ region. The excess noise factor, F, at À = 1550 nm was typically slightly less than multiplication, M, and showed very little dependence on temperature. The effective ratio of electron to hole ionization coefficients was approximately 0.7–0.8, the dark current activation energy close to room temperature was about Eg, indicating that the dark current is controlled by the diffusion of minority carriers. Below ~ 232 K, dark current activation energy is about Eg/2, indicative of carrier generation in the depletion region. M varied approximately as T−n, with n depending strongly on the reverse bias. In the low-frequency range below ~ 200 Hz, the noise current followed a 1/f behavior.

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