Reduction of the dead region for edge on strip detector by a guard ring structure

2003 ◽  
Vol 50 (2) ◽  
pp. 537-540
Author(s):  
Dejun Han ◽  
Chuanmin Wang ◽  
Guangfu Wang ◽  
Shuchen Du ◽  
Liyan Shen ◽  
...  
Keyword(s):  
Ring Structure ◽  
Guard Ring ◽  
Strip Detector ◽  
The Dead

Erratum: High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure

1989 ◽  
Vol 25 (4) ◽  
pp. 296
Author(s):  
J.K. Twynam ◽  
P.A. Claxton ◽  
R.C. Woods ◽  
D.R. Wight
Keyword(s):  
High Gain ◽  
Ring Structure ◽  
Guard Ring

Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

2013 ◽  
Vol 34 (3) ◽  
pp. 336-338 ◽  
Author(s):  
Woo-Suk Sul ◽  
Chae-Hun Lee ◽  
Gyu-Seong Cho
Keyword(s):  
Ring Structure ◽  
Guard Ring ◽  
Dark Count ◽  
Silicon Photomultipliers

Study and characterization of plastic encapsulated package for a three-axis piezoresistive acceleromete with guard-ring structure

2012 ◽  
Author(s):  
Hsieh-Shen Hsieh ◽  
Heng-Chung Chang ◽  
Chih-Fan Hu ◽  
Chao-Lin Cheng ◽  
Weileun Fang
Keyword(s):  
Ring Structure ◽  
Guard Ring

Excess noise, gain, and dark current in Ge avalanche photodiodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1070-1075
Author(s):  
D. Scansen ◽  
S. O. Kasap
Keyword(s):  
Activation Energy ◽  
Dark Current ◽  
Low Frequency ◽  
Ring Structure ◽  
Noise Factor ◽  
Excess Noise ◽  
Guard Ring ◽  
Excess Noise Factor ◽  
Wide Range ◽  
Current Activation

Measurements have been carried out on a p+ n type Ge avalanche photodiode (typical guard ring structure with channel stoppers) to obtain the excess noise factor, F; multiplication, M; and the dark current, Id over a wide range of temperatures (143–323 K). The multiplication initially increases with the illumination wavelength and peaks in the 1550 nm region because of more holes being injected into the avalanche region as the absorption depth becomes much longer than the width of the p+ region. The excess noise factor, F, at À = 1550 nm was typically slightly less than multiplication, M, and showed very little dependence on temperature. The effective ratio of electron to hole ionization coefficients was approximately 0.7–0.8, the dark current activation energy close to room temperature was about Eg, indicating that the dark current is controlled by the diffusion of minority carriers. Below ~ 232 K, dark current activation energy is about Eg/2, indicative of carrier generation in the depletion region. M varied approximately as T−n, with n depending strongly on the reverse bias. In the low-frequency range below ~ 200 Hz, the noise current followed a 1/f behavior.

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

2011 ◽  
Vol 679-680 ◽  
pp. 591-594 ◽  
Author(s):  
Victor Veliadis ◽  
Damian Urciuoli ◽  
H.C. Ha ◽  
Harold Hearne ◽  
Charles Scozzie
Keyword(s):  
Power Flow ◽  
Circuit Breaker ◽  
Vertical Channel ◽  
Operating Mode ◽  
Ring Structure ◽  
Fault Isolation ◽  
Guard Ring ◽  
Power Flow Control ◽  
Edge Termination ◽  
Switching Losses

Numerous high-voltage applications require symmetrical bi-directional power flow control and protection circuitry. While mechanical contactors and circuit breakers provide bi-directional fault protection, they have slow actuation and suffer severe degradation during repeated fault isolation. The normally-on (N-ON) SiC vertical-channel Junction-Field-Effect-Transistor (VJFET) is an efficient solution for bi-directional circuit-breaker applications due to its low conduction/switching losses, +500°C operational capability, ON-state match of the no-fault operating mode of the system, efficient gate-drive operation under unipolar biasing, and majority carrier device scalability. Efficient 600-V/10-A symmetrical bi-directional power flow was demonstrated using 0.1-cm2 1200-V rated N-ON VJFETs with a gate driver applying 0-V and -34 V gate biases during the ON and OFF states, respectively. A self-aligned trenched guard-ring structure provides reliable edge termination.

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