Transient response of GaAs integrated circuit to pulsed optical carrier injection

1988 ◽  
Vol 24 (24) ◽  
pp. 1499 ◽  
Author(s):  
T.F. Carruthers ◽  
J.F. Weller
Keyword(s):  
Transient Response ◽  
Integrated Circuit ◽  
Carrier Injection ◽  
Optical Carrier

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

2008 ◽  
Vol 600-603 ◽  
pp. 509-512 ◽  
Author(s):  
K. Neimontas ◽  
Kęstutis Jarašiūnas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
Gabriel Ferro
Keyword(s):  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Carrier Injection ◽  
Defect States ◽  
Optical Carrier ◽  
Temperature Range ◽  
All Optical ◽  
Bimolecular Recombination ◽  
Opposite Tendency

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.

Enhancing Point Defect Isolation by Using Ionizing Radiation

2019 ◽  
Author(s):  
Douglas J. Martin ◽  
Matthew J. Gadlage ◽  
Wai-Yat Leung ◽  
Jeffrey L. Titus
Keyword(s):  
Ionizing Radiation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
High Reliability ◽  
Ion Beam ◽  
Photon Emission ◽  
Fault Isolation ◽  
Oxide Semiconductor ◽  
Carrier Injection ◽  
Failure Site

Abstract An application-specific integrated circuit (ASIC) for a high reliability application is found to have a missing sidewall spacer in a single transistor. Manufacturer burn-in and standard component electrical tests do not capture this defect. The defect manifests after exposure to ionizing radiation. Photon emission microscopy (PEM), laser voltage imaging (LVI), and laserassisted device alteration (LADA) are used to isolate the failure site. At the failure site a focused ion beam (FIB) cross section indicates that a doubly doped drain (DDD) (N+) is likely present where a lightly doped drain (LDD) is designated. This defect leads to a failure mode that is consistent with hot-carrier injection in complementary metal-oxide semiconductor (CMOS) transistors. This paper presents the testability from a fault isolation aspect, shmoo plot characterization, and backside optical techniques to identify its spatial location. A discussion of the results includes why ionizing radiation allowed the defect’s capture and potential implications of using ionizing radiation as a viable failure analysis technique.

Tuning a two-dimensional photonic crystal resonance via optical carrier injection

2005 ◽  
Vol 30 (1) ◽  
pp. 64 ◽  
Author(s):  
F. Raineri ◽  
C. Cojocaru ◽  
R. Raj ◽  
P. Monnier ◽  
A. Levenson ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Two Dimensional ◽  
Carrier Injection ◽  
Optical Carrier ◽  
Dimensional Photonic Crystal ◽  
Two Dimensional Photonic Crystal
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