High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps

1988 ◽  
Vol 24 (24) ◽  
pp. 1483 ◽  
Author(s):  
T. Tanbun-Ek ◽  
R.A. Logan ◽  
J.P. van der Ziel
Keyword(s):  
Epitaxial Growth ◽  
High Frequency ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Buried Heterostructure

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

scholarly journals Towards practical applications of quantum emitters in boron nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Koperski ◽  
K. Pakuła ◽  
K. Nogajewski ◽  
A. K. Dąbrowska ◽  
M. Tokarczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Vapour Phase ◽  
Emission Characteristics ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Polydimethylsiloxane Films ◽  
Background Luminescence ◽  
Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

Élimination des hydrures métalliques des déchets gazeux d'un réacteur LP-MOVPE pour la croissance de composés (In, Ga) (As, P)

1993 ◽  
Vol 71 (7-8) ◽  
pp. 307-315 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
R. Lacoursière ◽  
A. Bensaada ◽  
C. A. Tran ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Transit Time ◽  
Vapour Phase ◽  
Reaction Chamber ◽  
Vapour Phase Epitaxy ◽  
Toxic Gases ◽  
Gas Molecules ◽  
Chemical Products ◽  
The Cost ◽  
New System

We have realized a new system for treating gaseous wastes from a metallorganic vapour phase epitaxy (MOVPE) reactor used for the low pressure epitaxial growth of intrinsic and doped semiconducting crystals in the InGaAsP family. The system is based on a series of 5 successive phases of destruction: dilution, combustion pyrolysis, condensation and filtering. The design minimizes the cost remarkably and optimizes the incineration of toxic gases. After the combustion of 138 m3 of H2 and the incineration of 276 L of phosphine, we observe that the reaction chamber does not show any corrosion nor any deposit of chemical products, which are daily eliminated together with the water produced during the combustion. For the maximum phosphine concentration that has been used (7340 ppm), no phosphine concentration has been detected in the output with a detecting system having a sensitivity of 0.001 ppm. For the total fluxes entering the reaction chamber (10–25 L/min), the transit time (1s) of gas molecules does not limit the efficiency of conversion of toxic gases. This is important if one wishes to adapt this system to a MOVPE production reaction using a higher flux of phosphine.[Journal translation]

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

1991 ◽  
Vol 115 (1-4) ◽  
pp. 248-253 ◽  
Author(s):  
H. Protzmann ◽  
T. Marschner ◽  
O. Zsebök ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metalorganic Vapour Phase Epitaxy

Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 104-109 ◽  
Author(s):  
C. Liu ◽  
P.A. Shields ◽  
S. Denchitcharoen ◽  
S. Stepanov ◽  
A. Gott ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Epitaxial Lateral Overgrowth ◽  
Vapour Phase Epitaxy ◽  
Lateral Overgrowth ◽  
Metalorganic Vapour Phase Epitaxy
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