GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser

1988 ◽  
Vol 24 (13) ◽  
pp. 824 ◽  
Author(s):  
M. Cao ◽  
P. Daste ◽  
Y. Miyamoto ◽  
Y. Miyake ◽  
S. Nogiwa ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wire ◽  
Single Quantum ◽  
Single Quantum Well

(InAs)1/(GaAs)n Superlattice Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Lopata ◽  
N. K. Dutta ◽  
Naresh chand
Keyword(s):  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Fiber Amplifiers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Short Period ◽  
Erbium Doped ◽  
Random Alloy

Strained layer In0.2Ga0.8As/GaAs quantum-well (QW) lasers have been used to pump Erbium Doped Fiber Amplifiers for use in opto-electronic communication systems. These InGaAs/GaAs Q-W lasers grown as graded index separate confinement heterostructures (GRINSCH) emit at 980 nm and have exhibited low threshold current densities, high electrical to optical power conversion efficiencies, low noise, and low temperature sensitivities [1–3]. Recently there has been much attention toward the growth and fabrication of devices containing short period superlattices of (InAs)m/(GaAs)m or (GaAs)m/(AlAs)n compositions [4–9]. Indeed the growth of inverted MODFET structures using a (GaAs)/(AlAs) superlattice barrier in place of an AlGaAs random alloy exhibited an increase in low temperature mobility due to reductions in the number of impurities and interface roughness [7]]. Can the optical properties of strained layer InGaAs/GaAs Q-W lasers also be improved by growing an (InAs)/(GaAs)4 short period superlattice as the active layer in place of the In0.2Ga0.8 As random alloy?This paper reports the fabrication of ridge waveguide lasers using a 6 period (InAs)1/(GaAs)4 superlattice active region in a GRINSCH laser structure. One period of the superlattice consists of 1 monolayer (ML) of InAs and 4 ML of GaAs. Thus the average In composition in the superlattice is 20%. This superlattice laser is an alternative to the In0.2Ga0.8As/GaAs random alloy quantum-well laser used as a pump source for Erbium Doped Fiber Amplifiers. In a single quantum well In0.2Ga0.8As/GaAs laser the active region is a thin layer (-70Å thick) sandwiched between GaAs barrier layers. The superlattice active laser reported here has 6 periods of (InAs)1/(GaAs)4 as the light emitting region of a total width comparable to a single quantum well of random alloy composition.

Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

1993 ◽  
Vol 5 (8) ◽  
pp. 864-867 ◽  
Author(s):  
K. Kudo ◽  
Y. Nagashima ◽  
S. Tamura ◽  
S. Arai ◽  
Y. Huang ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Optimization of InGaN Based Light Emitting Diodes

2006 ◽  
Vol 517 ◽  
pp. 195-201
Author(s):  
N. Zainal ◽  
Abu Hassan Haslan ◽  
Hassan Zainuriah ◽  
M. Roslan Hashim ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Simulation Results ◽  
Industrial Software

The performance of InGaN quantum well based Light Emitting Diodes; (LEDs) had been numerically investigated by using standard industrial software, Silvaco. In this work, we found that InGaN single quantum well (SQW) LEDs gives better performance than InGaN triple quantum wells LEDs. The simulation results suggest that the inhomogeneity of electron and hole distributions in quantum wells active region plays an important role in the LEDs performance. The threshold current per μm also increases as the number of quantum well is increased.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

1988 ◽  
Vol 10 (10) ◽  
pp. 1243-1248 ◽  
Author(s):  
Y. Chen ◽  
A. Hameury ◽  
J. Massies ◽  
C. Neri
Keyword(s):  
Quantum Well ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Single Quantum Well

Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm

2020 ◽  
Vol 111 ◽  
pp. 103567
Author(s):  
V. Pačebutas ◽  
B. Čechavičius ◽  
A. Krotkus
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well
Sign in / Sign up

Export Citation Format

Share Document