Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

K. Kudo; Y. Nagashima; S. Tamura; S. Arai; Y. Huang; Y. Suematsu

doi:10.1109/68.238236

Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

IEEE Photonics Technology Letters ◽

10.1109/68.238236 ◽

1993 ◽

Vol 5 (8) ◽

pp. 864-867 ◽

Cited By ~ 18

Author(s):

K. Kudo ◽

Y. Nagashima ◽

S. Tamura ◽

S. Arai ◽

Y. Huang ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Cited By ~ 7

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Narrow stripe graded barrier single quantum well lasers-threshold current considerations

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073457 ◽

1987 ◽

Vol 23 (6) ◽

pp. 988-992 ◽

Cited By ~ 11

Author(s):

N. Patel ◽

T. Mattos ◽

F. Prince ◽

A. Nunes

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Narrow Stripe

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Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

physica status solidi (b) ◽

10.1002/(sici)1521-3951(199901)211:1<533::aid-pssb533>3.0.co;2-# ◽

1999 ◽

Vol 211 (1) ◽

pp. 533-538 ◽

Cited By ~ 7

Author(s):

H. Page ◽

A.T. Meney ◽

A.R. Adams ◽

C.J. van der Poel

Keyword(s):

Hydrostatic Pressure ◽

Quantum Well ◽

Quantum Well Lasers ◽

Pressure Measurements ◽

Single Quantum ◽

Single Quantum Well

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IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21382 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1592-1593

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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High-speed operation of single-quantum-well lasers with large gain compression

IEEE Photonics Technology Letters ◽

10.1109/68.122334 ◽

1992 ◽

Vol 4 (2) ◽

pp. 118-120 ◽

Cited By ~ 8

Author(s):

K.Y. Lau ◽

N. Bar-Chaim

Keyword(s):

Quantum Well ◽

High Speed ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Gain Compression ◽

Large Gain

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Emission spectra of single quantum well lasers with inhomogeneous current injection

Journal of Applied Physics ◽

10.1063/1.341911 ◽

1988 ◽

Vol 64 (3) ◽

pp. 1022-1026 ◽

Cited By ~ 12

Author(s):

Yasunori Tokuda ◽

Yuji Abe ◽

Teruhito Matsui ◽

Kyozo Kanamoto ◽

Noriaki Tsukada ◽

...

Keyword(s):

Quantum Well ◽

Emission Spectra ◽

Current Injection ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106780 ◽

2021 ◽

Vol 150 ◽

pp. 106780

Author(s):

F.Z. Mami ◽

A. Kadri ◽

N. Mokdad ◽

K. Zitouni

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Mid Infrared ◽

Carrier Lifetimes

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Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers

Journal of Applied Physics ◽

10.1063/1.350757 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4583-4588 ◽

Cited By ~ 2

Author(s):

M. E. Givens ◽

L. M. Miller ◽

J. J. Coleman

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Well width dependence of gain and threshold current in GaAlAs single quantum well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1986.1073021 ◽

1986 ◽

Vol 22 (5) ◽

pp. 625-630 ◽

Cited By ~ 30

Author(s):

B. Saint-Cricq ◽

F. Lozes-Dupuy ◽

G. Vassilieff

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

Narrow stripe graded barrier single quantum well lasers-threshold current considerations

Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1%/kh) at 70°C

High-speed operation of single-quantum-well lasers with large gain compression

Emission spectra of single quantum well lasers with inhomogeneous current injection

Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers

Well width dependence of gain and threshold current in GaAlAs single quantum well lasers

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C