Modelling current/voltage characteristics of space-charge-limited currents with nonlinear velocity-field relationships

1988 ◽  
Vol 24 (1) ◽  
pp. 23-24 ◽  
Author(s):  
M.T. Abuelma'Atti
Keyword(s):  
Velocity Field ◽  
Space Charge ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Nonlinear Velocity ◽  
Space Charge Limited

Space-Charge-Limited Currents in n-i-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:H

1997 ◽  
Vol 467 ◽  
Author(s):  
Edith C. Molenbroek ◽  
C. H. M. Van Der Werf ◽  
K. F. Feenstra ◽  
F. Rubinelli ◽  
R. E. I. Schropp
Keyword(s):  
Space Charge ◽  
Defect Layer ◽  
Negative Bias ◽  
Hot Wire ◽  
Interface Defects ◽  
Current Voltage ◽  
Large Asymmetry ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

ABSTRACTSpace-charge-limited currents have been examined in a wide variety of n-i-n devices. If the devices were completely symmetric, the current-voltage characteristics would be identical for positive and negative bias, but in several devices differences between the two polarities were observed. In order to understand in which part of the device these differences originate, the influence of the contacts and interfaces on the JV characteristics were examined by using different metal top contacts, different n-layers and different i-layers. Ag and Al top contacts gave minor differences between the polarities, whereas with Cr contacts no differences were observed. Incorporation of a defect layer in the i-layer results in asymmetric JV curves. We have observed a small asymmetry in an experimental device, and a large asymmetry using AMPS modeling. N-i-n devices appear to be a sensitive probe for interface defects.

scholarly journals Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

2021 ◽  
Vol 24 (04) ◽  
pp. 407-412
Author(s):  
A.V. Naumov ◽  
◽  
V.V. Kaliuzhnyi ◽  
S.A. Vitusevich ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
Electron Transport ◽  
Space Charge ◽  
Ultraviolet Excitation ◽  
Gan Hemt ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Uv Excitation ◽  
Biosensor Applications ◽  
Space Charge Limited

In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different width. These nanostructures are studied extensively because of their great electronic and sensing advantages for electronic biosensor applications. We study the depletion effects and impact of ultraviolet excitation on the electron transport in sets of nanowires of different width from 1110 down to 185 nm. We have found significant difference in electrical characteristic’s behavior between wide (1110…480 nm) and narrow (280…185 nm) nanowires and have observed regions related to space-charge-limited transport for the narrowest nanowires. Also, we obtained evident dependence of nanowire’s current-voltage characteristics on the wavelength and energy of UV excitation. External UV excitation allows us to control the depletion widths in nanowires and effectively tune space-charge-limited transport.

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