Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

1987 ◽  
Vol 23 (25) ◽  
pp. 1346 ◽  
Author(s):  
W.K. Chan ◽  
H.M. Cox ◽  
J.H. Abeles ◽  
S.P. Kelty
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Langmuir Blodgett

A gas sensor fabricated with field-effect transistors and Langmuir-Blodgett film of porphyrin

1992 ◽  
Vol 210-211 ◽  
pp. 486-488 ◽  
Author(s):  
Sun Liangyan ◽  
Gu Changzhi ◽  
Wen Ke ◽  
Chao Xizhang ◽  
Li Tiejin ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Blodgett Film ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Film

High-Performance Field-Effect Transistors Based on Langmuir−Blodgett Films of Cyclo[8]pyrrole

Langmuir ◽  
2005 ◽  
Vol 21 (12) ◽  
pp. 5391-5395 ◽  
Author(s):  
Hai Xu ◽  
Gui Yu ◽  
Wei Xu ◽  
Yu Xu ◽  
Guanglei Cui ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Synthesis of organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene for efficient monolayer Langmuir–Blodgett organic field effect transistors

2017 ◽  
Vol 53 (5) ◽  
pp. 885-888 ◽  
Author(s):  
O. V. Borshchev ◽  
A. S. Sizov ◽  
E. V. Agina ◽  
A. A. Bessonov ◽  
S. A. Ponomarenko
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Langmuir Blodgett ◽  
Air Interface ◽  
Derivatives Of

The first synthesis of organosilicon derivatives of dialkyl[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) capable of forming a semiconducting monolayer at the water–air interface is reported.

Ion-sensitive field-effect transistors with ultrathin Langmuir-Blodgett membranes

1995 ◽  
Vol 27 (1-3) ◽  
pp. 325-328 ◽  
Author(s):  
M.J. Schöning ◽  
M. Sauke ◽  
A. Steffen ◽  
M. Marso ◽  
P. Kordos ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Langmuir Blodgett
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