High-Performance Field-Effect Transistors Based on Langmuir−Blodgett Films of Cyclo[8]pyrrole

Langmuir ◽  
2005 ◽  
Vol 21 (12) ◽  
pp. 5391-5395 ◽  
Author(s):  
Hai Xu ◽  
Gui Yu ◽  
Wei Xu ◽  
Yu Xu ◽  
Guanglei Cui ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Molecular field‐effect transistors using conducting polymer Langmuir–Blodgett films

1990 ◽  
Vol 56 (12) ◽  
pp. 1157-1159 ◽  
Author(s):  
J. Paloheimo ◽  
P. Kuivalainen ◽  
H. Stubb ◽  
E. Vuorimaa ◽  
P. Yli‐Lahti
Keyword(s):  
Conducting Polymer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Field ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Field-Effect Transistors Based on Langmuir−Blodgett Films of Phthalocyanine Derivatives as Semiconductor Layers

2003 ◽  
Vol 107 (35) ◽  
pp. 9226-9230 ◽  
Author(s):  
Kai Xiao ◽  
Yunqi Liu ◽  
Xuebin Huang ◽  
Yu Xu ◽  
Gui Yu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Easily Processable Highly Ordered Langmuir-Blodgett Films of Quaterthiophene Disiloxane Dimer for Monolayer Organic Field-Effect Transistors

Langmuir ◽  
2014 ◽  
Vol 30 (50) ◽  
pp. 15327-15334 ◽  
Author(s):  
Alexey S. Sizov ◽  
Daniil S. Anisimov ◽  
Elena V. Agina ◽  
Oleg V. Borshchev ◽  
Artem V. Bakirov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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