Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxy

1987 ◽  
Vol 23 (5) ◽  
pp. 209-210 ◽  
Author(s):  
K. Imanaka ◽  
H. Imamoto ◽  
F. Sato ◽  
M. Asai ◽  
M. Shimura
2014 ◽  
Vol 104 (20) ◽  
pp. 209901
Author(s):  
H. Turski ◽  
G. Muziol ◽  
P. Wolny ◽  
S. Grzanka ◽  
G. Cywiński ◽  
...  

2012 ◽  
Vol 111 (5) ◽  
pp. 053508 ◽  
Author(s):  
Samantha E. Bennett ◽  
Tim M. Smeeton ◽  
David W. Saxey ◽  
George D. W. Smith ◽  
Stewart E. Hooper ◽  
...  

2020 ◽  
Vol 28 (23) ◽  
pp. 35321
Author(s):  
G. Muziol ◽  
M. Hajdel ◽  
H. Turski ◽  
K. Nomoto ◽  
M. Siekacz ◽  
...  

1995 ◽  
Vol 417 ◽  
Author(s):  
C. Jelen ◽  
S. Slivken ◽  
J. Diaz ◽  
M. Erdtmann ◽  
S. Kim ◽  
...  

AbstractGaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.


1997 ◽  
Vol 175-176 ◽  
pp. 637-641 ◽  
Author(s):  
Moon-Deock Kim ◽  
Bong-Jin Kim ◽  
Min-Hyon Jeon ◽  
Jeong-Keun Ji ◽  
Sang-Dong Lee ◽  
...  

2014 ◽  
Vol 104 (2) ◽  
pp. 023503 ◽  
Author(s):  
H. Turski ◽  
G. Muziol ◽  
P. Wolny ◽  
S. Grzanka ◽  
G. Cywiński ◽  
...  

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