Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodes

H. Tanaka; Y. Kawamura; H. Asahi

doi:10.1049/el:19860484

Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodes

Electronics Letters ◽

10.1049/el:19860484 ◽

1986 ◽

Vol 22 (13) ◽

pp. 707 ◽

Cited By ~ 9

Author(s):

H. Tanaka ◽

Y. Kawamura ◽

H. Asahi

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Visible Laser ◽

Room Temperature Operation

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Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l551 ◽

1985 ◽

Vol 24 (Part 2, No. 7) ◽

pp. L551-L552 ◽

Cited By ~ 10

Author(s):

Sadao Fujii ◽

Shiro Sakai ◽

Masayoshi Umeno

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Room Temperature Operation

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Room temperature operation of TlInGaAs/InP DH laser diodes

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014615 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Asahi ◽

H.J. Lee ◽

A. Mizobata ◽

A. Fujiwara ◽

S. Gonda

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Room Temperature Operation

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Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.954123 ◽

2001 ◽

Vol 7 (2) ◽

pp. 149-151 ◽

Cited By ~ 37

Author(s):

M.O. Fischer ◽

M. Reinhardt ◽

A. Forchel

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Gaas Laser ◽

Room Temperature Operation

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Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire substrates using high-temperature-grown single-crystal AlN buffer layers

phys stat sol (a) ◽

10.1002/pssa.200303288 ◽

2003 ◽

Vol 200 (1) ◽

pp. 126-130 ◽

Cited By ~ 1

Author(s):

Yasuo Ohba ◽

Susumu Iida

Keyword(s):

High Temperature ◽

Single Crystal ◽

Room Temperature ◽

Laser Diodes ◽

Buffer Layers ◽

Sapphire Substrates ◽

Aln Buffer ◽

Grown Single Crystal ◽

Room Temperature Operation

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High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes

10.1117/12.2199252 ◽

2015 ◽

Author(s):

Yuzhi Song ◽

Jiakun Song ◽

Yu Zhang ◽

Kangwen Li ◽

Yun Xu ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Room Temperature ◽

Laser Diodes ◽

Type I ◽

Low Loss ◽

Quantum Well Laser ◽

Strained Quantum Well ◽

Room Temperature Operation

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Continuous room-temperature operation of microdisk laser diodes

Electronics Letters ◽

10.1049/el:19990850 ◽

1999 ◽

Vol 35 (15) ◽

pp. 1252 ◽

Cited By ~ 19

Author(s):

S.M.K. Thiyagarajan ◽

D.A. Cohen ◽

A.F.J. Levi ◽

S. Ryu ◽

R. Li ◽

...

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Room Temperature Operation

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Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation

Applied Physics Express ◽

10.7567/apex.9.012101 ◽

2015 ◽

Vol 9 (1) ◽

pp. 012101 ◽

Cited By ~ 10

Author(s):

Jijun Feng ◽

Ryoichi Akimoto

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Ridge Waveguide ◽

Waveguide Laser ◽

Low Threshold ◽

Ridge Waveguide Laser ◽

Room Temperature Operation

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IVA-4 room-temperature operation of 645-nm AlxGa1-xAs multi-quantum-well laser diodes grown by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22341 ◽

1985 ◽

Vol 32 (11) ◽

pp. 2540-2540

Author(s):

H. Iwamura ◽

T. Saku ◽

Y. Hirayama ◽

Y. Suzuki ◽

H. Okamoto

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Laser Diodes ◽

Quantum Well Laser ◽

Multi Quantum Well ◽

Room Temperature Operation

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Gas source MBE growth of TlInGaAs/InP laser diodes and their first successful room temperature operation

International Conference on Molecular Bean Epitaxy ◽

10.1109/mbe.2002.1037751 ◽

2003 ◽

Author(s):

H. Asahi ◽

H.J. Lee ◽

A. Fujiwara ◽

Y.K. Zhou

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Mbe Growth ◽

Gas Source ◽

Gas Source Mbe ◽

Room Temperature Operation

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Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

Chinese Physics Letters ◽

10.1088/0256-307x/31/5/054204 ◽

2014 ◽

Vol 31 (5) ◽

pp. 054204 ◽

Cited By ~ 3

Author(s):

Jun-Liang Xing ◽

Yu Zhang ◽

Yong-Ping Liao ◽

Juan Wang ◽

Wei Xiang ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Room Temperature ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Laser ◽

Low Threshold ◽

Room Temperature Operation

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