Micromachining of three-dimensional silicon structures using photoelectrochemical etching

1985 ◽  
Vol 21 (25-26) ◽  
pp. 1207 ◽  
Author(s):  
L. Tenerz ◽  
B. Hök
Keyword(s):  
Three Dimensional ◽  
Photoelectrochemical Etching ◽  
Silicon Structures

Side-wall roughness of deep trenches in 1D and 2D periodic silicon structures fabricated by photoelectrochemical etching

2011 ◽  
Vol 8 (6) ◽  
pp. 1936-1940 ◽  
Author(s):  
E. V. Astrova ◽  
G. V. Fedulova ◽  
Yu. A. Zharova ◽  
E. V. Gushchina
Keyword(s):  
Side Wall ◽  
Wall Roughness ◽  
Photoelectrochemical Etching ◽  
Silicon Structures

scholarly journals Three-dimensional pulsed field gradient NMR measurements of self-diffusion in anisotropic materials for energy storage applications

2019 ◽  
Vol 21 (8) ◽  
pp. 4538-4546 ◽  
Author(s):  
S. Engelke ◽  
L. E. Marbella ◽  
N. M. Trease ◽  
M. De Volder ◽  
C. P. Grey
Keyword(s):  
Energy Storage ◽  
Porous Silicon ◽  
Field Gradient ◽  
Three Dimensional ◽  
Pulsed Field ◽  
Self Diffusion ◽  
Silicon Structures ◽  
Energy Storage Applications ◽  
Nmr Methods ◽  
Pfg Nmr

The ability to resolve solvent in- and outside of the pores of mesoscopic porous silicon structures allows the effect of confinement on transport to be explored by 1H and 7Li PFG NMR methods and pore diameters and lengths to be estimated.

Capacitance Voltage Characteristics of Polysilicon–Polysilicon Oxide–Polysilicon Structures for Three-Dimensional Memory

2000 ◽  
Vol 609 ◽  
Author(s):  
John R. Lindsey ◽  
T. S. Kalkur
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Three Dimensional ◽  
Oxide Thickness ◽  
Bulk Silicon ◽  
Shunt Resistance ◽  
Chip Area ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Cv Measurements

ABSTRACTThree-dimensional integration offers a dramatic reduction in chip area required per bit and has long been a research objective. Three-dimensional integration with thin film transistors (TFTs) requires detailed parametric analysis with techniques such as Capacitance-Voltage (CV) Characterization. CV analysis of polysilicon TFTs uses polysilicon-oxide-polysilicon thin film structures. Most of the CV analysis involving polysilicon available to date, however, is with polysilicon-oxide-bulk silicon structures. In this paper, we report the results of modeling andmeasurement of the CV characteristics of polysilicon-polysilicon oxide-polysilicon for doped and undoped polysilicon. To increase the conductivity of the polysilicon, elevated temperatures were used for measurement. CV measurements matching the theoretical curves were made for these polysilicon thin films. Oxide thickness, series and shunt resistance were extracted and correlated to process problems and splits.

Fabrication of three-dimensional silicon structures by means of doping-selective etching (DSE)

1989 ◽  
Vol 16 (1-2) ◽  
pp. 67-82 ◽  
Author(s):  
Y. Lindén ◽  
L. Tenerz ◽  
J. Tirén ◽  
B. Hök
Keyword(s):  
Three Dimensional ◽  
Selective Etching ◽  
Silicon Structures

Maskless etching of three-dimensional silicon structures in KOH

1996 ◽  
Vol 57 (1) ◽  
pp. 47-52 ◽  
Author(s):  
Xinxin Li ◽  
Minhang Bao ◽  
Shaoqun Shen
Keyword(s):  
Three Dimensional ◽  
Silicon Structures

scholarly journals A Review on Cutting Edge Technologies of Silicon-Based Supercapacitors

2021 ◽  
Vol 2021 ◽  
pp. 1-17
Author(s):  
Zhong Wu ◽  
Xianfeng Zhang ◽  
Xiaoqi Jin ◽  
Tong Li ◽  
Jinlong Ge ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Three Dimensional ◽  
Rate Capability ◽  
Material Design ◽  
Supercapacitor Application ◽  
Potential Electrode ◽  
Synthesis Properties ◽  
Energy Conversion And Storage ◽  
Silicon Structures ◽  
Silicon Based

Despite Si-based materials and their derivatives have recently emerged as potential electrode materials in advanced energy conversion and storage applications, a review article has not been reported hitherto for Si-based supercapacitors. In this review, the representative progresses of Si-based materials have been illustrated including synthesis, properties, surface modification, and electrochemical properties. A variety of nanomaterials are presented regarding the electrode material design and booming device constructions. Effective strategies for the preparation of Si-based materials and their derivatives are summarized especially including silicon/silicon carbide nanowires, silicon substrates, silicon particles, three-dimensional silicon structures, and silicon-based doping materials. Meanwhile, the overall behaviors in supercapacitor application have been illustrated in terms of specific capacitance, rate capability, cycling life, and energy density. Furthermore, large-voltage microsupercapacitors are outlined for next-generation integration devices.

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