Capacitance Voltage Characteristics of Polysilicon–Polysilicon Oxide–Polysilicon Structures for Three-Dimensional Memory

2000 ◽  
Vol 609 ◽  
Author(s):  
John R. Lindsey ◽  
T. S. Kalkur
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Three Dimensional ◽  
Oxide Thickness ◽  
Bulk Silicon ◽  
Shunt Resistance ◽  
Chip Area ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Cv Measurements

ABSTRACTThree-dimensional integration offers a dramatic reduction in chip area required per bit and has long been a research objective. Three-dimensional integration with thin film transistors (TFTs) requires detailed parametric analysis with techniques such as Capacitance-Voltage (CV) Characterization. CV analysis of polysilicon TFTs uses polysilicon-oxide-polysilicon thin film structures. Most of the CV analysis involving polysilicon available to date, however, is with polysilicon-oxide-bulk silicon structures. In this paper, we report the results of modeling andmeasurement of the CV characteristics of polysilicon-polysilicon oxide-polysilicon for doped and undoped polysilicon. To increase the conductivity of the polysilicon, elevated temperatures were used for measurement. CV measurements matching the theoretical curves were made for these polysilicon thin films. Oxide thickness, series and shunt resistance were extracted and correlated to process problems and splits.

Calibration of Nanoprobe Capacitance-Voltage Spectroscopy (NCVS)

2008 ◽  
Author(s):  
Terence Kane ◽  
Michael P. Tenney ◽  
Andrew Erickson ◽  
Peter Harris
Keyword(s):  
Oxide Thickness ◽  
Test Structure ◽  
Measurement Instruments ◽  
Capacitance Sensor ◽  
Front End ◽  
Single Finger ◽  
Capacitance Voltage ◽  
Concentration Threshold ◽  
Cv Measurements ◽  
Process Completion

Abstract MOSFET devices are routinely measured at the probe pad level with conventional capacitance-voltage (CV) measurement instruments. Such measurements are done at the front end of line (FEOL) and back end of line (BEOL) process completion levels. The CV data is used to monitor the process and verify certain parametrics such as effective oxide thickness (EOT), Tox, gate drain overlap capacitance (Miller capacitance), trapped charge, diffusion/halo implant oxide leakage, doping concentration, threshold implant level and many others. This type of testing is treated at length in the classic text of Nichollian and Brews [1]. The introduction of Nanoprobe Capacitance Voltage Spectroscopy (NCVS) of discrete MOSFET devices and the method of performing scanning capacitance imaging (SCM) have been previously presented [2]. In that work, the authors used a capacitance sensor to measure the capacitance of an individual failing embedded DRAM capacitor. This paper will describe nanoprobe CV measurements of a discrete finger device from a multiple finger test structure and show comparable results obtained at the probe pad level, using an improved version of the earlier capacitance sensor. By comparing the BEOL test structure measurements with NCVS results from a single finger, we will verify and calibrate the nanoprobing technique.

scholarly journals Influence of antiferroelectric-like behavior on tuning properties of ferroelectric HZO-based varactors

MRS Advances ◽  
2021 ◽  
Author(s):  
Sukhrob Abdulazhanov ◽  
Maximilian Lederer ◽  
David Lehninger ◽  
Tarek Ali ◽  
Jennifer Emara ◽  
...  
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Temperature Measurements ◽  
Thin Film Capacitors ◽  
Capacitance Voltage ◽  
Field Cycling ◽  
The Impact ◽  
Cycle Dependence ◽  
Reduced Temperature

Abstract In this article, we investigate the capacitance–voltage (C–V) characteristics of $$\text {Hf}_{x}\text {Zr}_{1-x}\text {O}_{2}$$ Hf x Zr 1 - x O 2 metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping for varactor applications. The impact of field cycling during the wake-up process on the capacitance was analyzed. In addition, the effect of antiferroelectric-like (AFE) behavior on tuning was investigated. The transition between ferroelectric (FE) and AFE regime is particularly interesting for varactor application, as a reduced bias is required for tuning. The cycle dependence of the FE and AFE properties at elevated temperatures was also investigated, where it was shown that with an increase of temperature, the tunability is reduced. Temperature measurements also comply with recent studies of ferroelastic nature of AFE behavior. Graphic abstract

Imaging of platinum-shadowed macromolecular complexes in dark field

1984 ◽  
Vol 42 ◽  
pp. 146-147
Author(s):  
D.W. Andrews ◽  
F.P. Ottensmeyer
Keyword(s):  
Thin Film ◽  
Three Dimensional ◽  
Average Diameter ◽  
Dark Field ◽  
Bright Field ◽  
Field Mode ◽  
Macromolecular Complexes ◽  
Average Mass ◽  
Topological Features ◽  
Projection Images

Shadowing with heavy metals has been used for many years to enhance the topological features of biological macromolecular complexes. The three dimensional features present in directionaly shadowed specimens often simplifies interpretation of projection images provided by other techniques. One difficulty with the method is the relatively large amount of metal used to achieve sufficient contrast in bright field images. Thick shadow films are undesirable because they decrease resolution due to an increased tendency for microcrystalline aggregates to form, because decoration artefacts become more severe and increased cap thickness makes estimation of dimensions more uncertain.The large increase in contrast provided by the dark field mode of imaging allows the use of shadow replicas with a much lower average mass thickness. To form the images in Fig. 1, latex spheres of 0.087 μ average diameter were unidirectionally shadowed with platinum carbon (Pt-C) and a thin film of carbon was indirectly evaporated on the specimen as a support.

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

Three-Dimensional Atomic Structure of Supported Au Nanoparticles at High Temperature

Nanoscale ◽  
2021 ◽  
Author(s):  
Pei Liu ◽  
Ece Arslan Imran ◽  
Annick De Backer ◽  
Annelies de Wael ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Structure ◽  
Au Nanoparticles ◽  
Elevated Temperatures ◽  
Three Dimensional

Au nanoparticles (NPs) deposited on CeO2 are extensively used as thermal catalysts since the morphology of the NPs is expected to be stable at elevated temperatures. Although it is well...

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

Structural and Magneto-Electric Properties of Pulsed Laser Deposited Ferroelectric/Ferromagnetic Heterostructure

2009 ◽  
Vol 1199 ◽  
Author(s):  
Ricardo Martinez ◽  
Ashok Kumar ◽  
Ratnakar Palai ◽  
Ram S. Katiyar
Keyword(s):  
Elevated Temperatures ◽  
High Strain ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Ferromagnetic Behavior ◽  
Asymmetric Behavior ◽  
Normal Behavior ◽  
Wide Range ◽  
Capacitance Voltage ◽  
Voltage Relationship

AbstractAsymmetric superlattices (SLs) with ferromagnetic La0.7Sr0.3MnO3 (LSMO) and ferroelectric Ba0.7Sr0.3TiO3 (BST) as constitutive layers were fabricated on conducting LaNiO3 (LNO) coated (001) oriented MgO substrates using pulsed laser deposition (PLD). The crystallinity, ferroelectric and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300K, and ferroelectric behavior over a range of temperatures between 100K and 300K. The dielectric response as a function of frequency obeys normal behavior below 300 K, whereas it follows Maxwell–Wagner model at elevated temperatures. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SL indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.

scholarly journals Three-dimensional CFD modeling of thermal behavior of a disc brake and pad for an automobile

2020 ◽  
Vol 15 (4) ◽  
pp. 543-549
Author(s):  
Haydar Kepekci ◽  
Ergin Kosa ◽  
Cüneyt Ezgi ◽  
Ahmet Cihan
Keyword(s):  
Cast Iron ◽  
Friction Coefficient ◽  
Elevated Temperatures ◽  
Gray Cast Iron ◽  
Three Dimensional ◽  
Brake System ◽  
Gray Cast ◽  
Cfd Modeling ◽  
Disc Brake ◽  
Disc Material

Abstract The brake system of an automobile is composed of disc brake and pad which are co-working components in braking and accelerating. In the braking period, due to friction between the surface of the disc and pad, the thermal heat is generated. It should be avoided to reach elevated temperatures in disc and pad. It is focused on different disc materials that are gray cast iron and carbon ceramics, whereas pad is made up of a composite material. In this study, the CFD model of the brake system is analyzed to get a realistic approach in the amount of transferred heat. The amount of produced heat can be affected by some parameters such as velocity and friction coefficient. The results show that surface temperature for carbon-ceramic disc material can change between 290 and 650 K according to the friction coefficient and velocity in transient mode. Also, if the disc material gray cast iron is selected, it can change between 295 and 500 K. It is claimed that the amount of dissipated heat depends on the different heat transfer coefficient of gray cast iron and carbon ceramics.

Transient Temperature During the Vaporization of Liquid on a Pulsed Laser-Heated Solid Surface

1996 ◽  
Vol 118 (3) ◽  
pp. 702-708 ◽  
Author(s):  
H. K. Park ◽  
X. Zhang ◽  
C. P. Grigoropoulos ◽  
C. C. Poon ◽  
A. C. Tam
Keyword(s):  
Thin Film ◽  
Solid Surface ◽  
Elevated Temperatures ◽  
Bubble Nucleation ◽  
Transient Temperature ◽  
Specular Reflectance ◽  
Transient Temperature Field ◽  
Excimer Laser Pulse ◽  
Nanosecond Time Resolution ◽  
Laser Heated

The thermodynamics of the rapid vaporization of a liquid on a solid surface heated by an excimer laser pulse is studied experimentally. The transient temperature field is measured by monitoring the photothermal reflectance of an embedded thin film in nanosecond time resolution. The transient reflectivity is calibrated by considering a temperature gradient across the sample based on the static measurements of the thin film optical properties at elevated temperatures. The dynamics of bubble nucleation, growth, and collapse is detected by probing the optical specular reflectance. The metastability behavior of the liquid and the criterion for the onset of liquid–vapor phase transition in nanosecond time scale are obtained quantitatively for the first time.

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