Electro-optic effects and electroabsorption in a GaAs/AlGaAs multiquantum-well heterostructure near the bandgap

1987 ◽  
Vol 23 (23) ◽  
pp. 1235 ◽  
Author(s):  
M. Glick ◽  
D. Pavuna ◽  
F.K. Reinhart
Keyword(s):  
Electro Optic ◽  
Multiquantum Well

scholarly journals Electro-optic effect in strained and lattice matched multiquantum well structures — Role of excitonic resonances

1990 ◽  
Vol 8 (3) ◽  
pp. 317-321 ◽  
Author(s):  
J. Pamulapati ◽  
J.P. Loehr ◽  
J. Singh ◽  
P.K. Bhattacharya ◽  
M.J. Ludowise
Keyword(s):  
Electro Optic ◽  
Lattice Matched ◽  
Multiquantum Well

Quadratic electro‐optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap

1986 ◽  
Vol 48 (15) ◽  
pp. 989-991 ◽  
Author(s):  
M. Glick ◽  
F. K. Reinhart ◽  
G. Weimann ◽  
W. Schlapp
Keyword(s):  
Light Modulation ◽  
Electro Optic ◽  
Multiquantum Well

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti
Keyword(s):  
Free Convection ◽  
Temperature Measurement ◽  
Electro Optic

Detection of Terahertz Pulsed Radiation by using Heterodyne Electro-Optic Sampling Scheme

2012 ◽  
Vol 132 (9) ◽  
pp. 727-733
Author(s):  
Masahiko Tani ◽  
Michael I. Bakunov ◽  
Kohji Yamamoto ◽  
Kazuki Horita ◽  
Tetsuya Kinoshita ◽  
...  
Keyword(s):  
Sampling Scheme ◽  
Electro Optic

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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