Iterative determination of oxide thickness in MOS structures from one DC current/voltage pair

1984 ◽  
Vol 20 (2) ◽  
pp. 70 ◽  
Author(s):  
R.B. Calligaro
Keyword(s):  
Oxide Thickness ◽  
Current Voltage ◽  
Dc Current ◽  
Mos Structures

scholarly journals HYSTERESIS-LIKE FLATBAND VOLTAGE INSTABILITIES IN Al/Ta2O5-SiO2/Si STRUCTURES AND THEIR CONNECTION WITH J-V CHARACTERISTICS

2017 ◽  
Vol 34 (1-2) ◽  
Author(s):  
Nenad Novkovski ◽  
Albena Paskaleva ◽  
Elena Atanassova
Keyword(s):  
Oxide Thickness ◽  
Interface State ◽  
Si Substrate ◽  
Mutual Compensation ◽  
Current Voltage ◽  
Correct Determination ◽  
Flatband Voltage ◽  
State Densities ◽  
Layer I

Flatband and current-voltage instabilities in unstressed Al/Ta2O5-SiO2/Si structures were studied in details. It has been found that, after an initial run left on fresh samples, both C-V and J-V characteristics exhibit repeatable patterns. Precisely repeatable counterclockwise hysteresis-like loop in C-V characteristics occurs, while no significant hysteretic behaviour is observed in static J-V characteristics. The reduced instability in J-V characteristics is explained by mutual compensation of two opposite effects owing to the presence of trapped positive charges on slow traps in the interfacial SiO2-like layer: (i) flatband voltage shift and (ii) lowering of Fowler-Nordheim tunnelling barrier for holes injected from the Si substrate. Correct determination of equivalent oxide thickness and fast interface state densities requires using the C-V curves obtained during the runs right, because progressive trapping on slow states occurs during the runs left. Value of the oxide charge is to be determined using the value of the flatband voltage obtained from the run left (after an initial run right), since it corresponds to the state of empty slow traps.

Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs

Vacuum ◽  
1987 ◽  
Vol 37 (5-6) ◽  
pp. 403-405 ◽  
Author(s):  
X Aymerich-Humet ◽  
F Campabadal ◽  
F Serra-Mestres
Keyword(s):  
Oxide Thickness ◽  
Thickness Determination ◽  
Current Voltage ◽  
Dc Current

Contactless and Spatially‐Resolved Determination of Current‐Voltage Curves in Perovskite Solar Cells via Photoluminescence

Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Spatially Resolved ◽  
Current Voltage

scholarly journals Junction Parameter Extraction for Electronic Device Characterization

2004 ◽  
Vol 27 (2) ◽  
pp. 61-67
Author(s):  
S. Dib ◽  
C. Salame ◽  
N. Toufik ◽  
A. Khoury ◽  
F. Pélanchon ◽  
...  
Keyword(s):  
Electronic Device ◽  
Control Process ◽  
Parameter Extraction ◽  
Exponential Model ◽  
Voltage Characteristic ◽  
Model Parameters ◽  
Current Voltage Characteristic ◽  
Device Characterization ◽  
Current Voltage

A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.

scholarly journals A New Method for the Extraction of Diode Parameters Using a Single Exponential Model

2000 ◽  
Vol 22 (3) ◽  
pp. 157-163 ◽  
Author(s):  
S. Dib ◽  
M. De La Bardonnie ◽  
A. Khoury ◽  
F. Pelanchon ◽  
P. Mialhe
Keyword(s):  
Least Squares Method ◽  
Exponential Model ◽  
New Method ◽  
Ordinate Axis ◽  
Straight Line ◽  
Current Voltage ◽  
Method Approach ◽  
Single Exponential

A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to a straight line–is identified and the knowledge of the slope and of the intercept with the ordinate axis leads to the determination of the junction parameters. The method is applied to the characterization of the emitter-base junction of transistors and the results are discussed.

scholarly journals Contactless Determination of Optimal Chloride Concentration for Power Conversion Efficiency in CH3NH3Pb(Cl,I)3 Using Photoluminescence Spectroscopy

Photonics ◽  
2021 ◽  
Vol 8 (10) ◽  
pp. 412
Author(s):  
Takaho Asai ◽  
Seigo Ito ◽  
Takayuki Makino
Keyword(s):  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Chloride Concentration ◽  
Spectroscopic Characterization ◽  
Voltage Measurement ◽  
Current Voltage ◽  
Non Destructive ◽  
Pl Quenching

We applied room-temperature photoluminescence (PL) spectroscopy for the compositional engineering of a CH3NH3Pb(Cl,I)3 light harvester in an alloy-based perovskite solar cell. This spectroscopic characterization determines the optimal Cl concentration where the power conversion efficiency shows its maximum in a contactless and non-destructive manner. The PL quenching ratio evaluated from the comparative PL studies between the films grown on glass/ZrO2 and SnO2:F/TiO2 substrates exhibited its maximum at a Cl concentration of 10 mol%, which agrees with the Cl concentration determined from the current–voltage measurement-based device performance. We also discuss the possible reasons for the coincidence mentioned above regarding the charge extraction effect induced by Cl incorporation.

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