Optical gain measurements of 1.3 μm In1−xGaxAsyP1−yAs function of injected current density

1982 ◽  
Vol 18 (24) ◽  
pp. 1054 ◽  
Author(s):  
F.C. Prince ◽  
T.J.S. Mattos ◽  
N.B. Patel
Keyword(s):  
Current Density ◽  
Optical Gain

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

scholarly journals Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Sfina N ◽  
Jbeli A ◽  
Lazzari JL ◽  
Said M
Keyword(s):  
Current Density ◽  
Optical Gain ◽  
Laser Structure

The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers

2010 ◽  
Vol 107 (1) ◽  
pp. 013107 ◽  
Author(s):  
Shudong Wu ◽  
Yongge Cao ◽  
Stanko Tomić ◽  
Fumitaro Ishikawa
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Optical Gain ◽  
Quantum Well Lasers

Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser

2008 ◽  
Vol 40 (3) ◽  
pp. 489-493 ◽  
Author(s):  
M. Debbichi ◽  
A. Ben Fredj ◽  
M. Saïd ◽  
J.-L. Lazzari ◽  
Y. Cuminal ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Optical Gain ◽  
Mid Infrared ◽  
Quantum Well Laser ◽  
Nitrogen Effect

Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Marek Osiński
Keyword(s):  
Gallium Nitride ◽  
Theoretical Calculation ◽  
Current Density ◽  
Radiative Recombination ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Minimum Threshold ◽  
Effective Masses ◽  
Emitting Lasers

AbstractThreshold current density in GaN-based UV double-heterostructure lasers is predicted in the range of 2- 4 kA/cm2 using theoretical calculation of optimized heterostructure for various types of devices. Freecarrier (FC) and Coulomb-enhancement (CE) models are compared. Results are given for different combinations of effective masses. The minimum threshold current is not strongly influenced by the choice of effective masses. The FC model predicts lower than CE threshold in edge-emitting lasers, whereas the CE model predicts lower than EC threshold in thin VCSEL devices.

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

2015 ◽  
Vol 1 (1) ◽  
Author(s):  
H. Tanaka ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
K. Akahane
Keyword(s):  
Spontaneous Emission ◽  
Current Density ◽  
Optical Gain ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Annealing Process ◽  
Optical Confinement ◽  
Light Waveguide ◽  
Soi Technology

Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm

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