Periodic slow-wave low-loss structures for monolithic GaAs microwave integrated circuits

1979 ◽  
Vol 15 (19) ◽  
pp. 581 ◽  
Author(s):  
E.M. Bastida ◽  
G.P. Donzelli
Keyword(s):  
Integrated Circuits ◽  
Slow Wave ◽  
Low Loss ◽  
Microwave Integrated Circuits

scholarly journals The Application of New Du Pont/USA/Copper Composition for Manufacturing of Thick-Film Microwave Low Loss Resonators on L and X Band

1981 ◽  
Vol 9 (2) ◽  
pp. 157-163 ◽  
Author(s):  
Janusz J. Gondek ◽  
Marek A. Wojcicki ◽  
Jan Koprowski
Keyword(s):  
Statistical Analysis ◽  
Integrated Circuits ◽  
Mathematical Models ◽  
Thick Film ◽  
Future Development ◽  
Microwave Filters ◽  
Low Loss ◽  
Microwave Integrated Circuits ◽  
X Band ◽  
Measurement Results

The applicability of the various copper compositions to the production of thick-film microwave devices has been examined. The results of this work are presented in this paper. The paper presents criteria and computer programs for thick-film microwave integrated circuits. The investigations of asymmetrical striplines, stripline and circular resonators, microwave filters etc., have been used as a basis. The circuits were examined within the frequency band of 1–12 GHz. Based on the measurement results and the statistical analysis of the parameters of microwave integrated circuits, interesting conclusions concerned with the applications of thick-film techniques to microwaves have been drawn. The results obtained have been compared with other work and new mathematical models have been prepared. Finally the future development of microwave integrated circuits has been commented on.

Low-Loss Microcoaxial Rat-Race Hybrid for Si-Based Microwave Integrated Circuits

2016 ◽  
Vol 26 (3) ◽  
pp. 162-164 ◽  
Author(s):  
Yang Tian ◽  
Hong Wang ◽  
Zhihong Liu ◽  
Qianqian Meng ◽  
Kokyan Lee
Keyword(s):  
Integrated Circuits ◽  
Low Loss ◽  
Microwave Integrated Circuits

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

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