Internal stress and degradation in short-wavelength AlGaAs double heterojunction devices

1979 ◽  
Vol 15 (12) ◽  
pp. 342 ◽  
Author(s):  
I. Ladany ◽  
T.R. Furman ◽  
D.P. Marinelli
Keyword(s):  
Internal Stress ◽  
Short Wavelength ◽  
Heterojunction Devices ◽  
Double Heterojunction

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors

1996 ◽  
Vol 74 (S1) ◽  
pp. 239-242 ◽  
Author(s):  
W. R. McKinnon ◽  
S. P. McAlister ◽  
Z. Abid ◽  
E. E. Guzzo ◽  
S. Laframboise
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Rf Performance ◽  
Current Blocking

The dc and rf characteristics for InP/InGaAs heterojunction bipolar transistors having a single heterojunction design were measured and compared with those for double heterojunction devices that employ a composite collector. Although the composite-collector design improves the breakdown characteristics of our devices the rf performance was not as good. This we partially attribute to the collector heterojunction, which causes "current blocking".

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film
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