GaAs 50 GHz Schottky-barrier IMPATT diodes

1974 ◽  
Vol 10 (1) ◽  
pp. 7 ◽  
Author(s):  
T. Watanabe ◽  
H. Kodera ◽  
M. Migitaka
Keyword(s):  
Schottky Barrier ◽  
Impatt Diodes

Millimeter-wave GaAs Schottky-barrier IMPATT diodes

1972 ◽  
Vol 60 (11) ◽  
pp. 1448-1449 ◽  
Author(s):  
M. Migitaka ◽  
M. Nakamura ◽  
K. Saito ◽  
K. Sekine
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Impatt Diodes

Current-tuned GaAs Schottky-barrier Impatt diodes for 60–96 GHz operation

1978 ◽  
Vol 14 (25) ◽  
pp. 812 ◽  
Author(s):  
Robert I. Schawarz ◽  
Ernst Bonek
Keyword(s):  
Schottky Barrier ◽  
Impatt Diodes

Millimeter-wave GaAs Schottky-barrier IMPATT diodes

1974 ◽  
Vol 21 (1) ◽  
pp. 128-130 ◽  
Author(s):  
K. Nawata ◽  
M. Ikeda ◽  
Y. Ishii
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Impatt Diodes

Two-watt CW GaAs Schottky-barrier IMPATT diodes

1970 ◽  
Vol 58 (7) ◽  
pp. 1153-1154 ◽  
Author(s):  
Yong Sik Lee ◽  
C.K. Kim
Keyword(s):  
Schottky Barrier ◽  
Impatt Diodes

X-band performance of high efficiency GaAs Schottky barrier IMPATT diodes

1973 ◽  
Vol 20 (12) ◽  
pp. 1178-1178
Author(s):  
W.R. Wisseman ◽  
D.W. Shaw ◽  
R.L. Adams ◽  
T.E. Hasty
Keyword(s):  
Schottky Barrier ◽  
High Efficiency ◽  
X Band ◽  
Impatt Diodes

SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS

2005 ◽  
Vol 15 (04) ◽  
pp. 899-930 ◽  
Author(s):  
Konstantin Vassilevski
Keyword(s):  
Silicon Carbide ◽  
Thermal Properties ◽  
Schottky Barrier ◽  
High Power ◽  
Current Position ◽  
Microwave Frequencies ◽  
Figures Of Merit ◽  
Microwave Applications ◽  
Device Operation ◽  
Impatt Diodes

Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

Computer study on GaAs Schottky barrier IMPATT diodes

1973 ◽  
Vol 16 (6) ◽  
pp. 663-667 ◽  
Author(s):  
Michiharu Nakamura ◽  
Hiroshi Kodera ◽  
Masatoshi Migitaka
Keyword(s):  
Schottky Barrier ◽  
Computer Study ◽  
Impatt Diodes

30 GHz GaAs Schottky Barrier IMPATT Diodes

1972 ◽  
Author(s):  
Masatoshi MIGITAKA ◽  
Michiharu NAKAMURA ◽  
Katsutoshi SAITO ◽  
Yoichi KANEKO
Keyword(s):  
Schottky Barrier ◽  
Impatt Diodes

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes
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