Millimeter-wave GaAs Schottky-barrier IMPATT diodes

1972 ◽  
Vol 60 (11) ◽  
pp. 1448-1449 ◽  
Author(s):  
M. Migitaka ◽  
M. Nakamura ◽  
K. Saito ◽  
K. Sekine
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Impatt Diodes

Millimeter-wave GaAs Schottky-barrier IMPATT diodes

1974 ◽  
Vol 21 (1) ◽  
pp. 128-130 ◽  
Author(s):  
K. Nawata ◽  
M. Ikeda ◽  
Y. Ishii
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Impatt Diodes

Improved fabrication and noise performance of silicon double-drift millimeter-wave IMPATT diodes

1973 ◽  
Author(s):  
C.N. Dunn ◽  
B.I. Morris ◽  
C.L. Paulnack ◽  
T.E. Seidel ◽  
L.J. Smith
Keyword(s):  
Millimeter Wave ◽  
Noise Performance ◽  
Impatt Diodes

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

2020 ◽  
Vol 41 (3) ◽  
pp. 032103
Author(s):  
S. J. Mukhopadhyay ◽  
Prajukta Mukherjee ◽  
Aritra Acharyya ◽  
Monojit Mitra
Keyword(s):  
Millimeter Wave ◽  
Self Heating ◽  
Impatt Diodes

scholarly journals IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

2015 ◽  
Vol 2015 ◽  
pp. 1-11
Author(s):  
Bhadrani Banerjee ◽  
Anvita Tripathi ◽  
Adrija Das ◽  
Kumari Alka Singh ◽  
Aritra Acharyya ◽  
...  
Keyword(s):  
Comparative Study ◽  
Millimeter Wave ◽  
Gaas Substrate ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Atmospheric Window ◽  
Atmospheric Windows ◽  
Nonsinusoidal Voltage ◽  
Impatt Diodes

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

Current-tuned GaAs Schottky-barrier Impatt diodes for 60–96 GHz operation

1978 ◽  
Vol 14 (25) ◽  
pp. 812 ◽  
Author(s):  
Robert I. Schawarz ◽  
Ernst Bonek
Keyword(s):  
Schottky Barrier ◽  
Impatt Diodes
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