Noise measurements of silicon planar microwave transistors in the frequency range 4–8 GHz

1970 ◽  
Vol 6 (15) ◽  
pp. 478
Author(s):  
W. Kotyczka ◽  
M.J.O. Strutt
Keyword(s):  
Frequency Range ◽  
Microwave Transistors ◽  
Noise Measurements

POSSIBLE P‐WAVE OBSERVATIONS IN SHORT‐PERIOD SEISMIC NOISE

Geophysics ◽  
1965 ◽  
Vol 30 (6) ◽  
pp. 1187-1190 ◽  
Author(s):  
A. J. Seriff ◽  
C. J. Velzeboer ◽  
R. J. Haase
Keyword(s):  
Seismic Noise ◽  
P Wave ◽  
Deep Hole ◽  
Frequency Range ◽  
The Past ◽  
Deep Well ◽  
Short Period ◽  
Noise Measurements ◽  
Deep Boreholes

For the past two years we have been engaged in a program of seismic noise measurements in deep boreholes; noise in a frequency range of approximately 0.2 to 5.0 cps has been studied. A special deep‐well seismometer designed by The Geotechnical Corporation has been used for recording noise at depths down to 14,000 ft in cased holes. The seismometer, which has a response almost identical to the typical short‐period Benioff, was clamped to the casing of the deep hole by a mechanical locking arm during observation periods. An identical seismometer has been used as a reference in a 500‐ft hole adjacent to the deep well. A surface array of four vertical Benioff seismometers was also recorded, with one seismometer near the well and three others at distances ranging from 0.5 to 1.0 km. Two horizontal seismometers were stationed near the wellhead.

scholarly journals Source/Load-Pull Noise Measurements at Ka Band

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5615
Author(s):  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Lorenzo Pace ◽  
Antonio Serino ◽  
...  
Keyword(s):  
Test Bench ◽  
Noise Power ◽  
Frequency Range ◽  
Active Device ◽  
Noise Measurements ◽  
Set Up ◽  
Gan On Si ◽  
Marginal Improvement ◽  
Power Measurements ◽  
Load Pull

This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significant marginal improvement (as compared to forward measurements only) it is expected that the device under test should appreciably deviate from unidirectionality. For this reason, the source/load-pull technique is applied to frequencies at which the considered devices are still usable but their reverse noise factor exhibits a measurable dependence on the output terminations. Details on the test bench set up to the purpose, covering the 20–40 GHz frequency range, are provided. A characterization campaign on a 60 nm gate length, 4×35 µm GaN-on-Si HEMT fabricated by OMMIC is illustrated.

scholarly journals Impedance Analysis and Noise Measurements on Multi Walled Carbon Nanotube Networks

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7509
Author(s):  
Usha Philipose ◽  
Yan Jiang ◽  
Brianna Western ◽  
Michael Harcrow ◽  
Chris Littler ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Frequency ◽  
Impedance Analysis ◽  
Frequency Range ◽  
Electrical Measurements ◽  
Electrical Equivalent Circuit ◽  
Host Matrix ◽  
Multi Walled Carbon Nanotube ◽  
Frequency Independent ◽  
Noise Measurements

The electrical impedance characteristics of multi-walled carbon nanotube (MWCNTs) networks were studied as a function of CNT concentrations in the frequency range of 1 kHz–1 MHz. The novelty of this study is that the MWCNTs were not embedded in any polymer matrix and so the response of the device to electrical measurements are attributed to the CNTs in the network without any contribution from a polymer host matrix. Devices with low MWCNT packing density (0.31–0.85 µg/cm2) exhibit a frequency independent plateau in the low-frequency regime. At higher frequencies, the AC conductivity of these devices increases following a power law, characteristic of the universal dynamic response (UDR) phenomenon. On the other hand, devices with high MWCNT concentrations (>1.0 µg/cm2) exhibit frequency independent conductivity over the entire frequency range (up to 1 MHz), indicating that conduction in these devices is due to direct contact between the CNTs in the network. A simple single-relaxation time electrical equivalent circuit with an effective resistance and capacitance is used to describe the device performance. The electrical noise measurements on devices with different MWCNT packing densities exhibit bias-dependent low-frequency 1/f noise, attributed to resistance fluctuations.

RESEARCH AND MAPPING OF LOW FREQUENCY NOISE GENERATED BY POWER PLANTS OF INDUSTRIAL ENTREPRISES

Akustika ◽  
2021 ◽  
pp. 103
Author(s):  
Andrey Vasilyev
Keyword(s):  
Power Plants ◽  
Low Frequency ◽  
Environmental Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Frequency Range ◽  
Noise Mapping ◽  
Industrial Enterprises ◽  
Noise Measurements ◽  
Urban Territory

Environmental noise level from industrial enterprises is constantly increasing, especially in low frequency range. This paper presents the results of research and mapping of low frequency noise generated by power plants of industrial enterprises. Environmental noise mapping results of urban territory of Samara region of Russia are also presented. Results of noise measurements during industrial enterprises operation (on the example of “KuibyshevAzot” company) are showing that in some measuring points there were exceeding values compared with Russian sanitary norms requirements. The most serious problem is low frequency noise impact.

scholarly journals Extending the Frequency Range of Digital Noise Measurements to the Microwave Domain

2014 ◽  
Vol 62 (2) ◽  
pp. 368-372 ◽  
Author(s):  
Stephen R. Parker ◽  
Eugene N. Ivanov ◽  
John G. Hartnett
Keyword(s):  
Frequency Range ◽  
Noise Measurements

scholarly journals The Sound of Gas-Turbine Installations

1970 ◽  
Author(s):  
Robert M. Hoover
Keyword(s):  
Control Problem ◽  
Gas Turbine ◽  
Sound Pressure ◽  
Noise Control ◽  
Low Frequency ◽  
Frequency Range ◽  
Level Data ◽  
Industry Performance ◽  
Noise Measurements ◽  
Control Criteria

In this overall review of gas-turbine sound and its control, the author discusses the variety of installations, the scope of the noise control problem, criteria, industry performance, noise specifications, and noise measurements. In particular, the magnitude of the noise control problem is indicated by discussion of the sound of an unmuffled 20 Mw turbine. Typical sound pressure level data on current installations are given, and suggestions are made for noise control criteria in the low frequency range.

scholarly journals Radio noise measurements on the passage of solar particles through the corona

1959 ◽  
Vol 9 ◽  
pp. 554-561
Author(s):  
T. R. Hartz
Keyword(s):  
Radio Noise ◽  
Frequency Range ◽  
Fixed Frequency ◽  
Meaningful Information ◽  
Solar Observations ◽  
Noise Measurements ◽  
Frequency Coverage ◽  
Solar Particles ◽  
Large Frequency ◽  
Frequency Apparatus

The swept-frequency receiver is one of the most powerful tools for studying the processes that go on in the sun's atmosphere. However, the instrumentation becomes fairly elaborate if a large frequency range is to be covered by such an apparatus. Consequently, only a few such receivers have been built, and those that are in operation are somewhat limited in their frequency coverage. It then seems worth while to examine the data from existing fixed-frequency receiving stations in order to determine the extent to which they can supplement or approximate the results of the swept-frequency apparatus. Many solar observations at fixed frequencies have been made and are still being made by numerous observers. These data contain much meaningful information if they can be interpreted successfully.

Photoinduced Noise in Amorphous Semiconductor Films

1990 ◽  
Vol 192 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
A. Tagliaferro
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Incident Light ◽  
Monochromatic Light ◽  
Amorphous Semiconductor ◽  
Schottky Barriers ◽  
Electrical Noise ◽  
Semiconductor Films ◽  
Frequency Range ◽  
Noise Measurements

ABSTRACTElectrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconductive undoped a-Si:H and a-SiC:H (deposited by glow discharge) in the frequency range .1 – 20 kHz are obtained at room temperature. The analysis is performed upon metal/semiconductor/ITO Schottky barriers. The PSDs vs frequency follow l/fn law and show a change of magnitude when the wavelength of the incident light is varied around the value corresponding to the energy gap.

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