Use of space-charge approximation as trial solution in the computation of potential distributions in semiconductor devices

1969 ◽  
Vol 5 (25) ◽  
pp. 646 ◽  
Author(s):  
R. Van Overstraeten ◽  
W. Nuyts
Keyword(s):  
Space Charge ◽  
Semiconductor Devices ◽  
Trial Solution ◽  
Use Of Space

Microwave frequency multiplication by use of space charge domains in semiconductor superlattice

2003 ◽  
Vol 39 (7) ◽  
pp. 628 ◽  
Author(s):  
M. Haeussler ◽  
R. Scheuerer ◽  
K.F. Renk ◽  
Yu. Kuschurinov ◽  
D.G. Pavel'ev
Keyword(s):  
Space Charge ◽  
Microwave Frequency ◽  
Frequency Multiplication ◽  
Use Of Space ◽  
Semiconductor Superlattice

Use of Space Charge in Electron Optics

1955 ◽  
Vol 26 (3) ◽  
pp. 327-330 ◽  
Author(s):  
E. A. Ash
Keyword(s):  
Space Charge ◽  
Electron Optics ◽  
Use Of Space

Use of Space-Charge-Amplification Techniques in the Absorption Spectroscopy of Cs andCs2

1973 ◽  
Vol 8 (4) ◽  
pp. 1666-1672 ◽  
Author(s):  
D. Popescu ◽  
M. L. Pascu ◽  
C. B. Collins ◽  
B. W. Johnson ◽  
Iovitzu Popescu
Keyword(s):  
Space Charge ◽  
Absorption Spectroscopy ◽  
Use Of Space

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Electron holography of interfaces in electroceramics

1993 ◽  
Vol 51 ◽  
pp. 1088-1089
Author(s):  
Vinayak P. Dravid ◽  
V. Ravikumar ◽  
Richard Plass
Keyword(s):  
Space Charge ◽  
Direct Evidence ◽  
Materials Science ◽  
Theoretical Work ◽  
Electron Holography ◽  
Resolution Limit ◽  
Interference Phenomenon ◽  
X Ray ◽  
Electron Sources ◽  
Science Community

With the advent of coherent electron sources with cold field emission guns (cFEGs), it has become possible to utilize the coherent interference phenomenon and perform “practical” electron holography. Historically, holography was envisioned to extent the resolution limit by compensating coherent aberrations. Indeed such work has been done with reasonable success in a few laboratories around the world. However, it is the ability of electron holography to map electrical and magnetic fields which has caught considerable attention of materials science community.There has been considerable theoretical work on formation of space charge on surfaces and internal interfaces. In particular, formation and nature of space charge have important implications for the performance of numerous electroceramics which derive their useful properties from electrically active grain boundaries. Bonnell and coworkers, in their elegant STM experiments provided the direct evidence for GB space charge and its sign, while Chiang et al. used the indirect but powerful technique of x-ray microchemical profiling across GBs to infer the nature of space charge.

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