scholarly journals Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

2020 ◽  
Vol 56 (16) ◽  
pp. 840-843 ◽  
Author(s):  
Guo‐Liang Tian ◽  
Jin‐Shun Bi ◽  
Gao‐Bo Xu ◽  
Kai Xi ◽  
Yan‐Nan Xu ◽  
...  
Keyword(s):  
Electronic Synapse

A novel memristive electronic synapse-based Hermite chaotic neural network with application in cryptography

2015 ◽  
Vol 166 ◽  
pp. 487-495 ◽  
Author(s):  
Xinli Shi ◽  
Shukai Duan ◽  
Lidan Wang ◽  
Tingwen Huang ◽  
Chuandong Li
Keyword(s):  
Neural Network ◽  
Chaotic Neural Network ◽  
Electronic Synapse

An Electronic Synapse Based on 2D Ferroelectric CuInP 2 S 6

2020 ◽  
Vol 6 (12) ◽  
pp. 2000760
Author(s):  
Bochang Li ◽  
Sifan Li ◽  
Han Wang ◽  
Li Chen ◽  
Liang Liu ◽  
...  
Keyword(s):  
Electronic Synapse

An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

2019 ◽  
Vol 7 (5) ◽  
pp. 1298-1306 ◽  
Author(s):  
Jianhui Zhao ◽  
Zhenyu Zhou ◽  
Yuanyuan Zhang ◽  
Jingjuan Wang ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Quantum Conductance ◽  
Electronic Synapse ◽  
Memristor Device

An electrochemical metallization memristor based on Zr0.5Hf0.5O2 film and an active Cu electrode with quantum conductance and neuromorphic behavior has been reported in this work.

scholarly journals Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2098
Author(s):  
Xiaojuan Lian ◽  
Xinyi Shen ◽  
Jinke Fu ◽  
Zhixuan Gao ◽  
Xiang Wan ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Research Approach ◽  
Access Memory ◽  
Device Stability ◽  
Switching Characteristics ◽  
Electronic Synapse ◽  
Artificial Intelligence Systems

Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.

scholarly journals Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yi Li ◽  
Yingpeng Zhong ◽  
Jinjian Zhang ◽  
Lei Xu ◽  
Qing Wang ◽  
...  
Keyword(s):  
Synaptic Plasticity ◽  
Neuromorphic Systems ◽  
Activity Dependent ◽  
Electronic Synapse

Effect of surfactants on the data directionality and learning behaviour of Al/TiO2/FTO thin film memristor-based electronic synapse

2016 ◽  
Vol 21 (9) ◽  
pp. 2753-2757 ◽  
Author(s):  
T. D. Dongale ◽  
N. D. Desai ◽  
K. V. Khot ◽  
N. B. Mullani ◽  
P. S. Pawar ◽  
...  
Keyword(s):  
Thin Film ◽  
Learning Behaviour ◽  
Electronic Synapse

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

2015 ◽  
Vol 36 (8) ◽  
pp. 772-774 ◽  
Author(s):  
Wei Zhang ◽  
Ying Hu ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Electronic Synapse

Structural Engineering of Li-Based Electronic Synapse for High Reliability

2019 ◽  
Vol 40 (12) ◽  
pp. 1992-1995 ◽  
Author(s):  
Yunseok Choi ◽  
Chuljun Lee ◽  
Myungjun Kim ◽  
Yubin Song ◽  
Hyunsang Hwang ◽  
...  
Keyword(s):  
Structural Engineering ◽  
High Reliability ◽  
Electronic Synapse
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