An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

2019 ◽  
Vol 7 (5) ◽  
pp. 1298-1306 ◽  
Author(s):  
Jianhui Zhao ◽  
Zhenyu Zhou ◽  
Yuanyuan Zhang ◽  
Jingjuan Wang ◽  
Lei Zhang ◽  
...  

An electrochemical metallization memristor based on Zr0.5Hf0.5O2 film and an active Cu electrode with quantum conductance and neuromorphic behavior has been reported in this work.

2018 ◽  
Vol 113 (1) ◽  
pp. 013503 ◽  
Author(s):  
Xiaobing Yan ◽  
Jingjuan Wang ◽  
Mengliu Zhao ◽  
Xiaoyan Li ◽  
Hong Wang ◽  
...  

2015 ◽  
Vol 166 ◽  
pp. 487-495 ◽  
Author(s):  
Xinli Shi ◽  
Shukai Duan ◽  
Lidan Wang ◽  
Tingwen Huang ◽  
Chuandong Li

1999 ◽  
Vol 75 (11) ◽  
pp. 1622-1624 ◽  
Author(s):  
Teruo Ono ◽  
Yutaka Ooka ◽  
Hideki Miyajima ◽  
Yoshichika Otani

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.


Carbon ◽  
2014 ◽  
Vol 76 ◽  
pp. 451-454 ◽  
Author(s):  
Huei Chaeng Chin ◽  
Arkaprava Bhattacharyya ◽  
Vijay K. Arora

2011 ◽  
Vol 32 (10) ◽  
pp. 1436-1438 ◽  
Author(s):  
Chris Yakopcic ◽  
Tarek M. Taha ◽  
Guru Subramanyam ◽  
Robinson E. Pino ◽  
Stanley Rogers

2013 ◽  
Vol 114 (7) ◽  
pp. 073703 ◽  
Author(s):  
Wanzhi Qiu ◽  
Efstratios Skafidas

1992 ◽  
Vol 84 (8) ◽  
pp. 835-837 ◽  
Author(s):  
Vladimir I. Fal'ko ◽  
G.B. Lesovik

2018 ◽  
Vol 185 ◽  
pp. 01019
Author(s):  
Ekaterina Smelova ◽  
Kseniya Tsysar ◽  
Alexander Saletsky

Our theoretical study reveals the dependence of quantum conductance of Au-Co nanowires on their atomic structure. The results show the emergence of spin-filter state in one-dimensional Au-Co bimetallic nanowires. We found the existence of two transmission regime in Au-Co nanowires with low and high conductivity 1G0 and 2G0 for “zig-zag” and linear nanowire correspondingly. The study of transmission spectra of Au-Co nanowires reveals the control capability of spin transport regime by changing of bias voltage between bulk electrodes.


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