Solar‐blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V

2015 ◽  
Vol 51 (20) ◽  
pp. 1598-1600 ◽  
Author(s):  
M. Brendel ◽  
M. Helbling ◽  
A. Knigge ◽  
F. Brunner ◽  
M. Weyers
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Msm Photodetectors

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

2019 ◽  
Vol 31 (15) ◽  
pp. 1237-1240 ◽  
Author(s):  
Anisha Kalra ◽  
Shashwat Rathkanthiwar ◽  
Rangarajan Muralidharan ◽  
Srinivasan Raghavan ◽  
Digbijoy N. Nath
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Zero Bias ◽  
Solar Blind

Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes

2002 ◽  
Vol 38 (15) ◽  
pp. 824 ◽  
Author(s):  
C.J. Collins ◽  
U. Chowdhury ◽  
M.M. Wong ◽  
B. Yang ◽  
A.L. Beck ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Pin Photodiodes ◽  
Back Illuminated

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

2013 ◽  
Vol 103 (19) ◽  
pp. 191108 ◽  
Author(s):  
E. Cicek ◽  
R. McClintock ◽  
C. Y. Cho ◽  
B. Rahnema ◽  
M. Razeghi
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Back Illuminated

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency

scholarly journals Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  
Keyword(s):  
Chain Length ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Surface Defects ◽  
Theoretical Modelling ◽  
Ion Migration ◽  
Light Emitting ◽  
Operational Lifetime ◽  
Chain Lengths

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.

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