High‐performance dual‐channel InGaAs MOSFET for small signal RF applications

2015 ◽  
Vol 51 (15) ◽  
pp. 1203-1205 ◽  
Author(s):  
M.S. Adhikari ◽  
Y. Singh
Keyword(s):  
High Performance ◽  
Small Signal ◽  
Dual Channel ◽  
Rf Applications ◽  
Ingaas Mosfet

HIGH PERFORMANCE TANDEM TWO-STAGE EDFA, BI-DIRECTIONAL FIBER RING LASER AND CORRELATED Q-SWITCHED/MODE-LOCKED FIBER FIGURE-8 LASER

1996 ◽  
Vol 07 (03) ◽  
pp. 429-439
Author(s):  
JIANGDE PENG ◽  
XIAOMING LIU ◽  
PINGSHENG TANG ◽  
CHONGCHENG FAN ◽  
BINGKUN ZHOU
Keyword(s):  
High Performance ◽  
Longitudinal Mode ◽  
Fiber Amplifier ◽  
Mode Locking ◽  
Small Signal ◽  
Two Stage ◽  
Fiber Ring ◽  
Polarization Evolution ◽  
Mode Oscillation ◽  
Low Threshold

The recent progress on the research of Er 3+-doped fiber amplifier (EDFA) and laser (EDFL) in our laboratory is reported in this paper. A novel tandem two-stage EDFA configuration was achieved with a small signal gain of 41 dB, output power of 14.5 dBm (both at 1550 nm) and a bandwidth of more than 40 nm. In a novel coupled-ring EDFL, bi-directional simultaneous single longitudinal mode oscillation was accomplished with a laser linewidth of less than 1.0 GHz. By introducing polarization-evolution self-loss modulation in a LD pumped figure-8 all-fiber EDFL, correlated self Q-switching with variable period and mode-locking with low threshold were observed, respectively.

8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS

2010 ◽  
Author(s):  
L. Witters ◽  
S. Takeoka ◽  
S. Yamaguchi ◽  
A. Hikavyy ◽  
D. Shamiryan ◽  
...  
Keyword(s):  
High Performance ◽  
Dual Channel

SiGe power HBT's for low-voltage, high-performance RF applications

1998 ◽  
Vol 19 (4) ◽  
pp. 103-105 ◽  
Author(s):  
J.N. Burghartz ◽  
J.-O. Plouchart ◽  
K.A. Jenkins ◽  
C.S. Webster ◽  
M. Soyuer
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Rf Applications

A nanoscale dual-channel trench (DCT) MOSFET for analog/RF applications

2015 ◽  
Vol 88 ◽  
pp. 567-573 ◽  
Author(s):  
Manoj Singh Adhikari ◽  
Yashvir Singh
Keyword(s):  
Dual Channel ◽  
Rf Applications

Design of a 2-Stage Broadband Low Noise Amplifier Based on the Agilent ADS

2015 ◽  
Vol 719-720 ◽  
pp. 862-868
Author(s):  
Yan Fen Chen ◽  
Fu Hong Zhang
Keyword(s):  
Standing Wave ◽  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal ◽  
Power Gain ◽  
Input And Output ◽  
Signal Simulation ◽  
Simulation Results ◽  
Noise Amplifier

The noise coefficient and the power gain of a low noise amplifier affect the whole performance of the receiver. This paper presents the design and simulation of 2-stage low noise amplifier using the MGA633P8 and TQP3M9028’s S parameters to set S2P files. Not only analyze how to insert elements to match a broadband circuit, but also make some optimization by using the Agilent ADS in the case of small signal. Simulation results show that the proposed work implements a high performance of 2-stage low noise amplifier which works at 824 MHZ to 1980 MHZ, the gain is greater than 25 db, the noise coefficient is less than 0.6, input and output standing wave ratio (SWR) are both less than 1.3.

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