Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

2015 ◽  
Vol 51 (10) ◽  
pp. 780-782 ◽  
Author(s):  
Z.N. Sokolova ◽  
K.V. Bakhvalov ◽  
A.V. Lyutetskiy ◽  
N.A. Pikhtin ◽  
I.S. Tarasov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Charge Carriers ◽  
Capture Velocity

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

2009 ◽  
Vol 94 (24) ◽  
pp. 241906 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
H. Zhong ◽  
A. Tyagi ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Well ◽  
Polarization Field ◽  
Single Quantum ◽  
Single Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

Capture and Emission of Charge Carriers by Quantum Well

2018 ◽  
Vol 61 (2) ◽  
pp. 223-231
Author(s):  
V. N. Davydov ◽  
O. A. Karankevich
Keyword(s):  
Quantum Well ◽  
Charge Carriers

108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber

1990 ◽  
Vol 56 (4) ◽  
pp. 310-311 ◽  
Author(s):  
Steve Sanders ◽  
Lars Eng ◽  
Joel Paslaski ◽  
Amnon Yariv
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Multiple Quantum Well ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Passive Mode
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