Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology

A.K. Sahoo; S. Fregonese; P. Scheer; D. Celi; A. Juge; T. Zimmer

doi:10.1049/el.2014.3634

Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology

Electronics Letters ◽

10.1049/el.2014.3634 ◽

2015 ◽

Vol 51 (1) ◽

pp. 71-72

Author(s):

A.K. Sahoo ◽

S. Fregonese ◽

P. Scheer ◽

D. Celi ◽

A. Juge ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

28 Nm

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Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da03 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA03

Author(s):

Kazuya Ohuchi ◽

Naoki Kusunoki ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Contact Resistivity ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Cross Bridge ◽

Specific Contact ◽

Specific Contact Resistivity ◽

28 Nm

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A 1-6 GHz analog radio frequency power driver in 90 nm complementary metal-oxide semiconductor technology for wireless applications

International Journal of Circuit Theory and Applications ◽

10.1002/cta.1941 ◽

2013 ◽

Vol 43 (2) ◽

pp. 263-276

Author(s):

Saiyu Ren ◽

Isaac Abraham ◽

Seng Hong

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Radio Frequency Power ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Wireless Applications ◽

Frequency Power

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Nonlinear modelling of dynamic self‐heating in 28 nm bulk complementary metal–oxide semiconductor technology

Electronics Letters ◽

10.1049/el.2015.0200 ◽

2015 ◽

Vol 51 (7) ◽

pp. 581-583

Author(s):

A.K. Sahoo ◽

S. Fregonese ◽

P. Scheer ◽

D. Celi ◽

A. Juge ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Nonlinear Modelling ◽

Self Heating ◽

28 Nm

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Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA03 ◽

Cited By ~ 2

Author(s):

Kazuya Ohuchi ◽

Naoki Kusunoki ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Contact Resistivity ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Cross Bridge ◽

Specific Contact ◽

Specific Contact Resistivity ◽

28 Nm

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Light Emitting

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Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.034201 ◽

2010 ◽

Vol 49 (3) ◽

pp. 034201

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

Y. J. Chen ◽

Albert Chin

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Radio Frequency Power ◽

Oxide Semiconductor ◽

Power Characteristics ◽

Lightly Doped Drain ◽

Frequency Power

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Memory Design

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

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