0.5 V inverter‐based ultra‐low‐power, low‐noise VGA for medical ultrasound probes

2014 ◽  
Vol 50 (2) ◽  
pp. 69-71 ◽  
Author(s):  
P. Wang ◽  
T.M. Halvorsrød ◽  
T. Ytterdal
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Medical Ultrasound ◽  
Ultra Low Power ◽  
Ultrasound Probes

scholarly journals A 12b-control ultra-low-power low-noise SC-VGA for medical ultrasound probes

2013 ◽  
Vol 2013 (10) ◽  
pp. 55-57 ◽  
Author(s):  
Peng Wang ◽  
Thomas M. Halvorsrød ◽  
Trond Ytterdal
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Medical Ultrasound ◽  
Ultra Low Power ◽  
Ultrasound Probes

scholarly journals A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
S. Chrisben Gladson ◽  
Adith Hari Narayana ◽  
V. Thenmozhi ◽  
M. Bhaskar
Keyword(s):  
Low Power ◽  
Ieee 802.15.4 ◽  
Low Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Process Technology ◽  
Ultra Low Power ◽  
Power Mode ◽  
Noise Amplifier

AbstractDue to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain ($$S21$$ S 21 ) of 18.87 dB, minimum noise figure ($${NF}_{min.}$$ NF m i n . ) of 2.5 dB in the − 3 dB frequency range of 2.3–2.9 GHz, and third-order intercept point (IIP3) of − 7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of $$0.40{\mathrm{ mm}}^{2}$$ 0.40 mm 2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.

scholarly journals Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  
Keyword(s):  
Low Power ◽  
Power Supply ◽  
First Generation ◽  
Negative Resistance ◽  
Low Noise ◽  
Strain Sensors ◽  
Current Conveyors ◽  
Ultra Low Power ◽  
Active Elements ◽  
Low Power Cmos

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.

scholarly journals An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

2004 ◽  
Vol 14 (4) ◽  
pp. 156-158 ◽  
Author(s):  
J.B. Hacker ◽  
J. Bergman ◽  
G. Nagy ◽  
G. Sullivan ◽  
C. Kadow ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Low Power ◽  
Ka Band ◽  
Noise Amplifier
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