High pyroelectric coefficient modified lead titanate thin films deposition using gold electrode

2013 ◽  
Vol 49 (15) ◽  
pp. 952-953 ◽  
Author(s):  
M. Ahmed ◽  
D.P. Butler
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Gold Electrode ◽  
Pyroelectric Coefficient

Structural, Dielectric and Pyroelectric properties of Lanthanum modified Lead Titanate Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Sonalee Chopra ◽  
Seema Sharma ◽  
T.C. Goel ◽  
R.G. Mendiratta
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Mechanical Stability ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Microstructural Analysis ◽  
Pyroelectric Coefficient ◽  
Structural Investigations ◽  
Glass Substrates

ABSTRACTFerroelectric lead lanthanum titanate (Pb1−xLaxTi1−x/4O3) (PLTx) thin films (x=0.04,0.08 and 0.12) have been prepared by sol-gel spin coating process on ITO coated 7059 Corning glass substrates. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the thin films. For a better understanding of the crystallization mechanism, the structural investigations were carried out at various annealing temperatures (350°C, 450°C, 550°C and 650°C). Characterization of these films by X-ray diffraction shows that the films annealed at 650°C exhibit tetragonal structure with perovskite phase. Replacement of lanthanum in lead titanate results in reduction of tetragonal ratio (c/a), resulting in better mechanical stability. Microstructural analysis of the films are carried out by taking the Atomic Force Microscope (AFM) pictures. AFM images are characterized by slight surface roughness with a uniform crack free, densely packed structure. Dielectric, pyroelectric and ferroelectric studies carried out on these films have been reported. Dielectric constant and pyroelectric coefficient increase while Curie temperature decreases with increase in La content. The pyroelectric figures of merit of the films have also been calculated which suggest that 8% lanthanum is best suited material for pyroelectric detectors owing to its high pyroelectric coefficient (∼ 29nC/cm2 K), high voltage responsivity (∼420Vcm2/J), high detectivity (∼1.04×10−5Pa−1/2) and low variation of pyrocoefficient with temperature.

Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Pignolet ◽  
P. E. Schmid ◽  
L. Wang ◽  
F. Lévy
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Amorphous Films ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

AbstractPure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

scholarly journals Electro-Optical Properties of Sputtered Calcium Lead Titanate Thin Films for Pyroelectric Detection

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1073
Author(s):  
Elham Mafi ◽  
Nicholas Calvano ◽  
Jessica Patel ◽  
Md. Sherajul Islam ◽  
Md. Sakib Hasan Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Density Functional ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Radio Frequency Sputtering ◽  
Pyroelectric Current ◽  
Pyroelectric Detectors ◽  
Higher Temperature ◽  
Calcium Lead

We report the deposition and characterization of calcium lead titanate (PCT) thin films for pyroelectric detectors. PCT films of thicknesses ranging from ~250 to 400 nm were deposited on both silicon and Si/SiN/Ti/Au substrates at 13 mTorr pressure by 200W radio frequency sputtering in an Ar + O2 environment. Substrates were kept at variable temperatures during the deposition. The PCT films were annealed at various temperatures in an O2 environment for 15 min. X-ray diffraction results confirm the polycrystalline nature of these films. Energy dispersive spectroscopy function of scanning electron microscope showed that the films are stoichiometric (Ca0.43Pb0.57) TiO3 (Ca/Ti = 0.5, Pb/Ti = 0.66). Temperature dependence of capacitance, pyroelectric current, and pyroelectric coefficient was investigated for different PCT films. Our results show that films deposited at 550 °C and 600 °C demonstrate better quality and larger values of the pyroelectric coefficient. On the other hand, the capacitance fabricated on the PCT films at 550 °C showed the highest value of pyroelectric current and pyroelectric coefficient which were 14 pA and at 30 °C was ~2 µC/m2K respectively at a higher temperature. In addition, we used density functional theory to determine the atomic and band structure, real and imaginary parts of dielectric constant and refractive index, and absorption and reflection constants with energy.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Optical waveguiding properties of lead titanate thin films grown on quartz by pulsed-laser deposition

2003 ◽  
Vol 24 (3) ◽  
pp. 465-470 ◽  
Author(s):  
A Essahlaoui ◽  
A Roemer ◽  
A Boudrioua ◽  
E Millon ◽  
J.C Loulergue
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lead Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical Waveguiding

Effect of Excess Lead on Dielectric and Ferroelectric Properties of Alkoxide-Derived Lead Titanate Thin Films

2002 ◽  
Vol 271 (1) ◽  
pp. 309-314
Author(s):  
T. Ohno ◽  
H. Suzuki ◽  
J. Takahashi ◽  
S. Shimada ◽  
T. Ota ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Excess Lead
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