High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO 2 gate insulator

2013 ◽  
Vol 49 (6) ◽  
pp. 425-427 ◽  
Author(s):  
O. Seok ◽  
W. Ahn ◽  
M.‐K. Han ◽  
M.‐W. Ha
Keyword(s):  
Breakdown Voltage ◽  
Gate Insulator ◽  
High Breakdown Voltage ◽  
Gan On Si

A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator

2011 ◽  
Vol 28 (10) ◽  
pp. 107303 ◽  
Author(s):  
Bin Zhou ◽  
Jin-Yan Wang ◽  
Di Meng ◽  
Shu-Xun Lin ◽  
Min Fang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gate Insulator ◽  
High Breakdown Voltage

High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator

2006 ◽  
Author(s):  
Shuichi Yagi ◽  
Mitsuaki Shimizu ◽  
Masaki Inada ◽  
Hajime Okumura ◽  
Hiromichi Ohashi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gate Insulator ◽  
High Breakdown Voltage

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

2006 ◽  
Vol 50 (6) ◽  
pp. 1057-1061 ◽  
Author(s):  
S. Yagi ◽  
M. Shimizu ◽  
M. Inada ◽  
Y. Yamamoto ◽  
G. Piao ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gate Insulator ◽  
High Breakdown Voltage

scholarly journals Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4740
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Shuzhen You ◽  
Karen Geens ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Degradation Process ◽  
Gate Insulator ◽  
Reliability Characteristics ◽  
Vehicle Structure ◽  
Gan On Si ◽  
Module Development ◽  
Bilayer Dielectric ◽  
Good Agreement

We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and Vth transient methods confirms that the Vth shifts are similar, despite the additional interface present in the bilayer devices.

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