Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer

2009 ◽  
Vol 45 (25) ◽  
pp. 1318 ◽  
Author(s):  
H.Y. Ryu ◽  
T. Sakong ◽  
J.K. Son
Keyword(s):  
Thermal Characteristic ◽  
Laser Diodes ◽  
Passivation Layer

Thermal Characteristic of VCSEL with AlN Film Passivation Layer

2010 ◽  
Vol 39 (12) ◽  
pp. 2113-2117
Author(s):  
马祥柱 MA Xiang-zhu ◽  
张斯钰 ZHANG Si-yu ◽  
赵博 ZHAO Bo ◽  
李辉 LI Hui ◽  
霍晋 HUO Jin ◽  
...  
Keyword(s):  
Thermal Characteristic ◽  
Passivation Layer ◽  
Aln Film

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

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