An accurate large-signal model for RF SOI LDMOS including self-heating effect

China-Ireland International Conference on Information and Communications Technologies (CIICT 2008) ◽

10.1049/cp:20080796 ◽

2008 ◽

Author(s):

Huang Wang ◽

Lingling Sun ◽

Zhiping Yu ◽

Jun Liu

Keyword(s):

Heating Effect ◽

Large Signal ◽

Signal Model ◽

Self Heating

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Accurate RF large-signal model of LDMOSFETs including self-heating effect

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.903103 ◽

2001 ◽

Vol 49 (2) ◽

pp. 387-390 ◽

Cited By ~ 12

Author(s):

Youngoo Yang ◽

Jaehyok Yi ◽

Bumman Kim

Keyword(s):

Heating Effect ◽

Large Signal ◽

Signal Model ◽

Self Heating

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A scalable large‐signal model with self‐heating effect based on a hybrid‐scaling rule for GaN high‐electron‐mobility transistors

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2905 ◽

2021 ◽

Author(s):

Siyu Gu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Heating Effect ◽

Large Signal ◽

Signal Model ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors ◽

Scaling Rule

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Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.907143 ◽

2007 ◽

Vol 54 (11) ◽

pp. 2830-2836 ◽

Cited By ~ 75

Author(s):

Anwar Jarndal ◽

GÜnter Kompa

Keyword(s):

Intermodulation Distortion ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts

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An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3132892 ◽

2021 ◽

pp. 1-1

Author(s):

Wenrui Hu ◽

Yong-Xin Guo

Keyword(s):

Multilayer Perceptron ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.734546 ◽

1998 ◽

Vol 46 (11) ◽

pp. 1638-1644 ◽

Cited By ~ 29

Author(s):

C.-J. Wei ◽

Y.A. Tkachenko ◽

D. Bartle

Keyword(s):

Large Signal ◽

Signal Model ◽

Charge Conservation ◽

Self Heating ◽

Gaas Mesfet

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Temperature dependent MOSFET RF large signal model incorporating self heating effects

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) ◽

10.1109/mwsym.1999.779791 ◽

2003 ◽

Cited By ~ 11

Author(s):

D. Heo ◽

E. Chen ◽

E. Gebara ◽

S. Yoo ◽

J. Laskar ◽

...

Keyword(s):

Large Signal ◽

Temperature Dependent ◽

Signal Model ◽

Self Heating ◽

Heating Effects

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An Empirical Large-Signal Model for SiC MESFETs With Self-Heating Thermal Model

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2008.2005922 ◽

2008 ◽

Vol 56 (11) ◽

pp. 2671-2680 ◽

Cited By ~ 18

Author(s):

K.S. Yuk ◽

G.R. Branner

Keyword(s):

Thermal Model ◽

Large Signal ◽

Signal Model ◽

Self Heating

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A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

Microelectronics Reliability ◽

10.1016/j.microrel.2010.09.025 ◽

2011 ◽

Vol 51 (2) ◽

pp. 229-234 ◽

Cited By ~ 8

Author(s):

D. Mari ◽

M. Bernardoni ◽

G. Sozzi ◽

R. Menozzi ◽

G.A. Umana-Membreno ◽

...

Keyword(s):

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts

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A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2137 ◽

2015 ◽

Vol 30 (1) ◽

pp. e2137 ◽

Cited By ~ 13

Author(s):

Zhang Wen ◽

Yuehang Xu ◽

Changsi Wang ◽

Xiaodong Zhao ◽

Zhikai Chen ◽

...

Keyword(s):

Extraction Method ◽

Parameter Extraction ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemt ◽

Trapping Effects

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A novel temperature-dependent large-signal model of heterojunction bipolar transistor with a unified approach for self-heating and ambient temperature effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.805569 ◽

2002 ◽

Vol 49 (12) ◽

pp. 2099-2106 ◽

Cited By ~ 10

Author(s):

Hyun-Min Park ◽

Songcheol Hong

Keyword(s):

Ambient Temperature ◽

Temperature Effects ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Unified Approach ◽

Large Signal ◽

Temperature Dependent ◽

Signal Model ◽

Self Heating

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