A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

D. Mari; M. Bernardoni; G. Sozzi; R. Menozzi; G.A. Umana-Membreno; B.D. Nener

doi:10.1016/j.microrel.2010.09.025

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

Microelectronics Reliability ◽

10.1016/j.microrel.2010.09.025 ◽

2011 ◽

Vol 51 (2) ◽

pp. 229-234 ◽

Cited By ~ 8

Author(s):

D. Mari ◽

M. Bernardoni ◽

G. Sozzi ◽

R. Menozzi ◽

G.A. Umana-Membreno ◽

...

Keyword(s):

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts

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Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.907143 ◽

2007 ◽

Vol 54 (11) ◽

pp. 2830-2836 ◽

Cited By ~ 75

Author(s):

Anwar Jarndal ◽

GÜnter Kompa

Keyword(s):

Intermodulation Distortion ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts

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An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3132892 ◽

2021 ◽

pp. 1-1

Author(s):

Wenrui Hu ◽

Yong-Xin Guo

Keyword(s):

Multilayer Perceptron ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2009.2033299 ◽

2009 ◽

Vol 57 (12) ◽

pp. 3322-3332 ◽

Cited By ~ 66

Author(s):

K.S. Yuk ◽

G.R. Branner ◽

D.J. McQuate

Keyword(s):

High Power ◽

Charge Trapping ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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An improved empirical large-signal model for high-power GaN HEMTs including self-heating and charge-trapping effects

2009 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2009.5165806 ◽

2009 ◽

Cited By ~ 3

Author(s):

Kelvin Yuk ◽

G. R. Branner ◽

David McQuate

Keyword(s):

High Power ◽

Charge Trapping ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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Development of advanced AlGaN/GaN HEMTs large signal model

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) ◽

10.1109/edaps.2017.8276935 ◽

2017 ◽

Author(s):

Yuehang Xu ◽

Shuman Mao

Keyword(s):

Large Signal ◽

Signal Model ◽

Gan Hemts

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An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2014.2364821 ◽

2014 ◽

Vol 62 (12) ◽

pp. 2878-2887 ◽

Cited By ~ 65

Author(s):

Changsi Wang ◽

Yuehang Xu ◽

Xuming Yu ◽

Chunjiang Ren ◽

Zhensheng Wang ◽

...

Keyword(s):

Ambient Temperature ◽

Temperature Effects ◽

Signal Modeling ◽

Large Signal ◽

Self Heating ◽

Gan Hemts

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An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.734546 ◽

1998 ◽

Vol 46 (11) ◽

pp. 1638-1644 ◽

Cited By ~ 29

Author(s):

C.-J. Wei ◽

Y.A. Tkachenko ◽

D. Bartle

Keyword(s):

Large Signal ◽

Signal Model ◽

Charge Conservation ◽

Self Heating ◽

Gaas Mesfet

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A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design

physica status solidi (c) ◽

10.1002/pssc.200983877 ◽

2010 ◽

Vol 7 (10) ◽

pp. 2450-2454 ◽

Cited By ~ 1

Author(s):

Valiallah Zomorrodian ◽

Yi Pei ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Circuit Design ◽

Large Signal ◽

Signal Model ◽

Non Linear Circuit ◽

Linear Circuit ◽

Non Linear ◽

Gan Hemts

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Accurate RF large-signal model of LDMOSFETs including self-heating effect

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.903103 ◽

2001 ◽

Vol 49 (2) ◽

pp. 387-390 ◽

Cited By ~ 12

Author(s):

Youngoo Yang ◽

Jaehyok Yi ◽

Bumman Kim

Keyword(s):

Heating Effect ◽

Large Signal ◽

Signal Model ◽

Self Heating

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ANN-Based Large-Signal Model of AlGaN/GaN HEMTs With Accurate Buffer-Related Trapping Effects Characterization

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2020.2990171 ◽

2020 ◽

Vol 68 (7) ◽

pp. 3090-3099

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Anwar Jarndal ◽

Taijun Liu ◽

Biao Hu ◽

...

Keyword(s):

Large Signal ◽

Signal Model ◽

Gan Hemts ◽

Trapping Effects

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