Silicon-contacted waveguide integrated Ge/Si avalanche photodiode with 32 GHz bandwidth and multiplication gain >8

2019 ◽  
Author(s):  
S.A. Srinivasan ◽  
P. De Heyn ◽  
G. Hiblot ◽  
Hongtao Chen ◽  
S. Lardenois ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Multiplication Gain

scholarly journals Effect of Multiplication and Absorption Layers Width on Avalanche Multiplication Gain in InGaAs/InP Avalanche Photodiode

2018 ◽  
Vol 7 (4.35) ◽  
pp. 559
Author(s):  
Mahdi All Khamis ◽  
W. Emilin Rashid ◽  
Pin Jern Ker ◽  
K. Y. Lau
Keyword(s):  
High Performance ◽  
Collection Efficiency ◽  
Avalanche Photodiode ◽  
Long Distance ◽  
Avalanche Multiplication ◽  
Layer Width ◽  
Simulation Tools ◽  
Multiplication Gain ◽  
High Bit Rate ◽  
Primary Current

The separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multiplication layer width (MLW) and absorption layer width (ALW) on APD performance is studied and investigated. Silvaco TCAD software is used as simulation tools to simulate a precise model of InGaAs/InP APD and analyze its, performance under an illuminated condition. As such, three different ALW with various MLW has been simulated while the structure values and material parameters are kept constant. It was found that in the APD with smaller MLW, the distance between the punch-through voltage and the breakdown voltage can be maximized. Therefore, the operation region of APD will be extended. In addition, the multiplication gain is obtained from the photocurrent and primary current by taking the APD collection efficiency effect under the consideration.

scholarly journals Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Avalanche Photodiode ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio

AbstractIn this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K.

INVESTIGATION HIGH SENSITIVE PHOTO DETECTOR DEVICE BASED ON THE AVALANCHE PHOTODIODE FOR OPTOELECTRONIC MEASURING SYSTEMS

2016 ◽  
Vol 2016 (6) ◽  
pp. 69-75
Author(s):  
I.O. Bragynets ◽  
◽  
O.G. Kononenko ◽  
Yu.О. Masjurenko ◽  
◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Measuring Systems

InP/Ga0.47In0.53As superlattice avalanche photodiode

1988 ◽  
Vol 24 (15) ◽  
pp. 964 ◽  
Author(s):  
S. Batra ◽  
A. Lahiri ◽  
P. Chakrabarti
Keyword(s):  
Avalanche Photodiode

A compact NaI(Tl) with avalanche photodiode gamma spectrometer for in situ radioactivity measurements in marine environment

2021 ◽  
Vol 92 (3) ◽  
pp. 033301
Author(s):  
Zhenyu Sun ◽  
Fan Zhou ◽  
Zhe Cao ◽  
Ziheng Zhou ◽  
Xiaohu Wang ◽  
...  
Keyword(s):  
Marine Environment ◽  
Avalanche Photodiode ◽  
Gamma Spectrometer ◽  
Radioactivity Measurements

scholarly journals Inverted p-down Design for High-Speed Photodetectors

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Communications ◽  
High Speed ◽  
Pulse Amplitude ◽  
Avalanche Photodiode ◽  
Device Fabrication ◽  
Pulse Amplitude Modulation ◽  
Optical Coupling ◽  
Pin Photodiodes

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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