Monitoring Bond Wire Fatigue Based on Modeling of IGBT Module On-State Voltage Drop

2019 ◽  
Author(s):  
Yu Luo ◽  
Fei Wang ◽  
Xinyi Shu ◽  
Lijun Zhang ◽  
Xiaoqing Quan
Keyword(s):  
Voltage Drop ◽  
Igbt Module ◽  
Bond Wire ◽  
Wire Fatigue

Analytical modeling of thermo-mechanical stress for bond wire of IGBT module

2021 ◽  
Vol 127 ◽  
pp. 114401
Author(s):  
Xingyu Dai ◽  
Xin Yang ◽  
Xinlong Wu ◽  
Chunming Tu ◽  
Guoyou Liu
Keyword(s):  
Mechanical Stress ◽  
Analytical Modeling ◽  
Igbt Module ◽  
Bond Wire

scholarly journals An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3962 ◽  
Author(s):  
Zilang Hu ◽  
Xinglai Ge ◽  
Dong Xie ◽  
Yichi Zhang ◽  
Bo Yao ◽  
...  
Keyword(s):  
Evaluation Method ◽  
Junction Temperature ◽  
Normal Operation ◽  
Monitoring Method ◽  
Bonding Wire ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Bond Wire ◽  
Artificial Neural Network Ann ◽  
Multivariate Monitoring

The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

Reliability model of bond wire fatigue for IGBT in MMC with system redundancy consideration

2018 ◽  
Vol 88-90 ◽  
pp. 1164-1167 ◽  
Author(s):  
Tao Zheng ◽  
Meng Huang ◽  
Yi Liu ◽  
Xiaoming Zha
Keyword(s):  
Reliability Model ◽  
Bond Wire ◽  
Wire Fatigue

scholarly journals Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Energies ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3749
Author(s):  
Humphrey Mokom Njawah Achiri ◽  
Vaclav Smidl ◽  
Zdenek Peroutka ◽  
Lubos Streit
Keyword(s):  
Least Squares ◽  
Least Squares Method ◽  
Voltage Drop ◽  
State Of The Art ◽  
Junction Temperature ◽  
Measured Temperature ◽  
Thermal Impedance ◽  
Heating And Cooling ◽  
Igbt Module ◽  
Art Methods

State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module

2021 ◽  
pp. 105202
Author(s):  
Mingxing Du ◽  
Jinlei Xin ◽  
Hongbin Wang ◽  
Ziwei Ouyang ◽  
Kexin Wei
Keyword(s):  
Intersection Point ◽  
Igbt Module ◽  
Movement Characteristic ◽  
Bond Wire ◽  
Lift Off

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1449
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Yunfeng Jiang ◽  
Lie Li
Keyword(s):  
Online Monitoring ◽  
Junction Temperature ◽  
Collector Current ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Three Phase ◽  
Bond Wires ◽  
Bond Wire ◽  
Three Phase Inverter

Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

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