Novel 2-D Bifacial Solar Cell Using Large Built-in Internal Electric Fields: a P-I-N Structure Simulation

2018 ◽  
Author(s):  
G. Golan
Keyword(s):  
Solar Cell ◽  
Electric Fields ◽  
Structure Simulation ◽  
Bifacial Solar Cell

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Numerical analysis of bifacial solar cell using PC1D software

2013 ◽  
Author(s):  
Suhaila Sepeai ◽  
M. Y. Sulaiman ◽  
M. Khairunaz ◽  
A.W. Azhari ◽  
K. Sopian ◽  
...  
Keyword(s):  
Solar Cell ◽  
Numerical Analysis ◽  
Bifacial Solar Cell

scholarly journals Surface Passivation Studies on n+pp+ Bifacial Solar Cell

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Suhaila Sepeai ◽  
M. Y. Sulaiman ◽  
Kamaruzzaman Sopian ◽  
Saleem H. Zaidi
Keyword(s):  
Solar Cell ◽  
Screen Printing ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Front Surface ◽  
Back Surface ◽  
Antireflective Coatings ◽  
Solar Cell Performance ◽  
Sandwiched Structure ◽  
Bifacial Solar Cell

Bifacial solar cell is a specially designed solar cell for the production of electricity from both sides of the solar cell. It is an active field of research to make photovoltaics (PV) more competitive by increasing its efficiency and lowering its costs. We developed an n+pp+ structure for the bifacial solar cell. The fabrication used phosphorus-oxy-trichloride (POCl3) diffusion to form the emitter and Al diffusion using conventional screen printing to produce the back surface field (BSF). The n+pp+ bifacial solar cell was a sandwiched structure of antireflective coatings on both sides, Argentum (Ag) as a front contact and Argentum/Aluminum (Ag/Al) as a back contact. This paper reports the solar cell performance with different surface passivation or antireflecting coatings (ARC). Silicon nitride (SiN) deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), thermally grown silicon dioxide (SiO2), PECVD-SiO2, and SiO2/SiN stack were used as ARC. The efficiency obtained for the best bifacial solar cell having SiN as the ARC is 8.32% for front surface illumination and 3.21% for back surface illumination.

scholarly journals Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter

Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1388 ◽  
Author(s):  
Caixia Zhang ◽  
Honglie Shen ◽  
Luanhong Sun ◽  
Jiale Yang ◽  
Shiliang Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Laser Power ◽  
Silicon Solar Cells ◽  
Selective Emitter ◽  
Commercial Line ◽  
Scan Speed ◽  
P Type ◽  
Bifacial Solar Cell ◽  
Different Thickness ◽  
Sinx Layer

In this paper, we report one bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear fingers with different ratios of height and width and rear silicon nitride (SiNx) layer with different thickness were optimized, and a highest rear efficiency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear efficiencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 °C) were successfully achieved, respectively.

MODIFICATION OF BSF LAYER IN BIFACIAL SOLAR CELL VIA PHOTOSENSITIZATION OF MOLECULES NANOSTRUCTURE

2016 ◽  
Vol 78 (6-7) ◽  
Author(s):  
Nurul Aqidah Mohd Sinin ◽  
Mohd Adib Ibrahim ◽  
Suhaila Sepeai ◽  
Mohamad Yusof Sulaiman ◽  
Mohd Asri Mat Teridi ◽  
...  
Keyword(s):  
Solar Cell ◽  
Surface Passivation ◽  
Light Trapping ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Back Surface ◽  
Dye Molecules ◽  
Interface Layers ◽  
Bifacial Solar Cell

Surface passivation is the most significant step to keep the recombination loss at a tolerable minimum and avoid an unacceptably large efficiency loss when moving towards thinner silicon material. In this study, the modification and photosensitization on back surface field (BSF) of bifacial solar cell was investigated by using dye molecules nanostructure namely DiO. The DiO dye molecules nanostructure was passivated on SiNW and BSF layers using spin-coating method. The energy gaps of DiO dye are 2.14 eV (DiO in chloroform), 2.13 eV (DiO on silicon nanowire (SiNW)) and 2.12 eV (DiO on BSF). The time resolved photoluminescence increased with the DiO dye coated on SiNW ( 14Ï„">  = 1.24 nm) and BSF layers ( 14Ï„">  = 0.93 nm) compared to DiO dye in chloroform ( 14Ï„">  = 0.54 nm). The light trapping inside the interface layers of DiO dye/silicon indicating a slow process of charge recombination before its reach equilibrium states, it is due to interface interaction bonding within boundary layers and dye molecules nanostructure. The short circuit current density also increased about 25% from 4.44 to 5.56 mA/cm2 when applying the dye molecules nanostructure on BSF of the cell. Collection of photo carrier lead of internal and external quantum efficiency improved about 19% and 25%, respectively, is mainly due to energy transported to the junction. The photo-generated electron on DiO dye lead to improvement in the exciton dissociation efficiency leading to increase in the electrical properties.

scholarly journals The Glass-glass Module Using n-type Bifacial Solar Cell with PERT Structure and its Performance

2016 ◽  
Vol 92 ◽  
pp. 750-754 ◽  
Author(s):  
Qingzhu Wei ◽  
Chenyang Wu ◽  
Xiaorui Liu ◽  
Sanyang Zhang ◽  
Feng Qian ◽  
...  
Keyword(s):  
Solar Cell ◽  
Bifacial Solar Cell

Extra-high short-circuit current for bifacial solar cells in sunny and dark–light conditions

2017 ◽  
Vol 53 (72) ◽  
pp. 10046-10049 ◽  
Author(s):  
Jialong Duan ◽  
Yanyan Duan ◽  
Yuanyuan Zhao ◽  
Benlin He ◽  
Qunwei Tang
Keyword(s):  
Solar Cell ◽  
Counter Electrode ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Simulated Sunlight ◽  
Light Conditions ◽  
Dark Light ◽  
Sunlight Irradiation ◽  
Current Densities ◽  
Bifacial Solar Cell

We present here a symmetrically structured bifacial solar cell tailored by two fluorescent photoanodes and a platinum/titanium/platinum counter electrode, yielding extra-high short-circuit current densities as high as 28.59 mA cm−2 and 119.9 μA cm−2 under simulated sunlight irradiation (100 mW cm−2, AM1.5) and dark–light conditions, respectively.

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