scholarly journals Surface Passivation Studies on n+pp+ Bifacial Solar Cell

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Suhaila Sepeai ◽  
M. Y. Sulaiman ◽  
Kamaruzzaman Sopian ◽  
Saleem H. Zaidi

Bifacial solar cell is a specially designed solar cell for the production of electricity from both sides of the solar cell. It is an active field of research to make photovoltaics (PV) more competitive by increasing its efficiency and lowering its costs. We developed an n+pp+ structure for the bifacial solar cell. The fabrication used phosphorus-oxy-trichloride (POCl3) diffusion to form the emitter and Al diffusion using conventional screen printing to produce the back surface field (BSF). The n+pp+ bifacial solar cell was a sandwiched structure of antireflective coatings on both sides, Argentum (Ag) as a front contact and Argentum/Aluminum (Ag/Al) as a back contact. This paper reports the solar cell performance with different surface passivation or antireflecting coatings (ARC). Silicon nitride (SiN) deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), thermally grown silicon dioxide (SiO2), PECVD-SiO2, and SiO2/SiN stack were used as ARC. The efficiency obtained for the best bifacial solar cell having SiN as the ARC is 8.32% for front surface illumination and 3.21% for back surface illumination.

2016 ◽  
Vol 78 (6-7) ◽  
Author(s):  
Nurul Aqidah Mohd Sinin ◽  
Mohd Adib Ibrahim ◽  
Suhaila Sepeai ◽  
Mohamad Yusof Sulaiman ◽  
Mohd Asri Mat Teridi ◽  
...  

Surface passivation is the most significant step to keep the recombination loss at a tolerable minimum and avoid an unacceptably large efficiency loss when moving towards thinner silicon material. In this study, the modification and photosensitization on back surface field (BSF) of bifacial solar cell was investigated by using dye molecules nanostructure namely DiO. The DiO dye molecules nanostructure was passivated on SiNW and BSF layers using spin-coating method. The energy gaps of DiO dye are 2.14 eV (DiO in chloroform), 2.13 eV (DiO on silicon nanowire (SiNW)) and 2.12 eV (DiO on BSF). The time resolved photoluminescence increased with the DiO dye coated on SiNW ( 14Ï„">  = 1.24 nm) and BSF layers ( 14Ï„">  = 0.93 nm) compared to DiO dye in chloroform ( 14Ï„">  = 0.54 nm). The light trapping inside the interface layers of DiO dye/silicon indicating a slow process of charge recombination before its reach equilibrium states, it is due to interface interaction bonding within boundary layers and dye molecules nanostructure. The short circuit current density also increased about 25% from 4.44 to 5.56 mA/cm2 when applying the dye molecules nanostructure on BSF of the cell. Collection of photo carrier lead of internal and external quantum efficiency improved about 19% and 25%, respectively, is mainly due to energy transported to the junction. The photo-generated electron on DiO dye lead to improvement in the exciton dissociation efficiency leading to increase in the electrical properties.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Vidur Raj ◽  
Dipankar Chugh ◽  
Lachlan E. Black ◽  
M. M. Shehata ◽  
Li Li ◽  
...  

AbstractSurface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.


2018 ◽  
Vol 53 (12) ◽  
pp. 9180-9190 ◽  
Author(s):  
Yifang Wang ◽  
Jie Zhang ◽  
Shuhuang Chen ◽  
Haoyu Zhang ◽  
Ligui Li ◽  
...  

2019 ◽  
Vol 141 (9) ◽  
Author(s):  
Himanshu Sainthiya ◽  
Narendra S. Beniwal

This paper presents the effect of the front surface water cooling on performance parameters (solar cell temperature, back surface temperature, outlet water temperature, electrical efficiency, overall efficiency, etc.) of photovoltaic/thermal (PV/T) module in both winter and summer seasons in Indian climatic conditions. A mathematical model of PV/T module considering energy balance equations has also been presented. A comparative analysis of performance parameters obtained analytically and experimentally has also been presented. A fair agreement has also been found between analytical and experimental results which is supported by correlation coefficient of approximately unity and root mean square error of 10–14%. By front surface water cooling, solar cell and back surface temperature of PV/T module have been found to decrease considerably which in turn resulted in enhanced electrical and overall efficiency of module in winter and summer seasons.


1992 ◽  
Vol 260 ◽  
Author(s):  
S. -L. Zhang ◽  
M. Östling ◽  
U. Smith ◽  
R. Buchta

Tungsten (W) films were deposited on the front surface of float-zone (FZ) Si wafers, from tungsten hexafluoride (WF6) by low pressure chemical vapor deposition (LPCVD). The back surface conditions of the Si wafers was the major concern of this study. Various back surface coatings were investigated, tungsten, thermal SiO2 and LPCVD-Si3N4. Isothermal heat treatments were performed in an argon flow furnace at 760°C for 8 to 30 min. The silicide formation was monitored by Rutherford backscattering spectrometry (RBS). No difference in the silicidation rate was found on the wafers with a back surface oxide layer as compared to that of the reference wafers with no back surface coating. However, for wafers with the back surface covered with Si3N4 or W, a retarded silicidation rate was observed. This phenomenon appeared to be insensitive to the presence of a cap layer (PECVD-SiO2) on the W films before annealing. A model including the behavior of point defects is proposed to provide an explanation to this observation.


2021 ◽  
Author(s):  
Kaustuv Dasgupta ◽  
Anup Mondal ◽  
Utpal Gangopadhyay

Abstract The major challenge of PV cell design and installation has always been to find the optimum cost per energy and area of installation of solar panels. In densely populated and high-yielding agricultural country like India land acquisition is becoming an issue. Moreover the consisting demand to deduce the cost per energy indulges the worldwide scientists to design more efficient solar cells with low production cost. In developing countries scientists and engineers are trying to find an amicable solution to meet up these problems. In this paper the mathematical modelling of a dual SIS bifacial vertically mounted solar panel has been proposed to mitigate the energy and land area crisis in countries of Indian subcontinent, south Asia and elsewhere. The SIS (Semiconductor-Insulator-Semiconductor) technology was chosen for its extremely low thermal budget and less complicated production procedure. A bifacial solar cell with SIS junction in both sides was modelled. The front surface SIS junction was considered ZnO-SiO2-Si(p-type) while the back surface junction was considered Si(p type)-Al2O3-SnO. The efficiency for front and back surface was calculated as 5.64% and 5.58% respectively. We have further considered the effect of albedo from two different surfaces (soil and concrete) and the efficiencies of front and back surface for these albedo radiations. The angle of installation was optimized for both these effects. Considering both direct and albedo the all-day efficiency was calculated as 22.47% for a sunny day tropical region.


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