Antenna Diagnosis and Power Density Calculation of 5G Millimeter-wave Mobile Terminal Using Inverse Source Technique

2018 ◽  
Author(s):  
Bo Xu ◽  
L. Scialacqua ◽  
A. Scannavini ◽  
L.J. Foged ◽  
Zhinong Ying ◽  
...  
Keyword(s):  
Power Density ◽  
Millimeter Wave ◽  
Mobile Terminal ◽  
Density Calculation

Millimeter wave power density in aqueous biological samples

2001 ◽  
Vol 22 (4) ◽  
pp. 288-291 ◽  
Author(s):  
S.I. Alekseev ◽  
M.C. Ziskin
Keyword(s):  
Power Density ◽  
Millimeter Wave ◽  
Biological Samples ◽  
Wave Power ◽  
Wave Power Density

scholarly journals Forward Transformation from Reactive Near-Field to Near and Far-Field at Millimeter-Wave Frequencies

2020 ◽  
Vol 10 (14) ◽  
pp. 4780
Author(s):  
Serge Pfeifer ◽  
Arya Fallahi ◽  
Jingtian Xi ◽  
Esra Neufeld ◽  
Niels Kuster
Keyword(s):  
Electric Field ◽  
Power Density ◽  
Millimeter Wave ◽  
Mobile Communications ◽  
Average Power ◽  
Spatial Average ◽  
Far Field ◽  
Phase Reconstruction ◽  
Noise Levels ◽  
Wide Range

With the advent of 5G mobile communications at millimeter-wave frequencies, the assessment of the maximum averaged power density on numerous surfaces close to the transmitter will become a requirement. This makes phasor knowledge about the electric and magnetic fields an inevitable requirement. To avoid the burdensome measurement of these field quantities in the entire volume of interest, phase reconstruction algorithms from measurements over a plane in the far-field region are being extensively developed. In this paper, we extended the previously developed method of phase reconstruction to evaluate the near and far-field of sources with bounded uncertainty, which is robust with respect to noisy data and optimized for a minimal number of measurement points at a distance as close as λ /5 from the source. The proposed procedure takes advantage of field integral equations and electric field measurements with the EUmmWVx probe to evaluate the field phasors close to the radiation source and subsequently obtain the field values in the whole region of interest with minimal computation and measurement costs. The main constraints are the maximal noise level regarding the peak electric field and measurement plane size with respect to the percentage of transmitted power content. The measurement of a third plane overcomes some of the noise issues. The method was evaluated by simulations of a wide range of antennas at different noise levels and at different distances and by measurements of four different antennas. A successful reconstruction in the near and far-field was achieved both qualitatively and quantitatively for distances between 2.5–150 mm from the antenna and noise levels of −24 dB from the peak. The deviation of reconstruction from the simulation reference for the peak spatial-average power density with an averaging area of 1 cm 2 was, in all cases, well within the uncertainty budget of 0.6 dB, if the reconstruction planes captured >95% of the total radiated power. The proposed new method is very promising for compliance assessment and can reduce test time considerably.

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

2018 ◽  
Vol 65 (1) ◽  
pp. 45-50 ◽  
Author(s):  
Brian Romanczyk ◽  
Steven Wienecke ◽  
Matthew Guidry ◽  
Haoran Li ◽  
Elaheh Ahmadi ◽  
...  
Keyword(s):  
Power Density ◽  
Millimeter Wave ◽  
State Of The Art

High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density

2007 ◽  
Author(s):  
Y.-F. Wu ◽  
M. Moore ◽  
A. Abrahamsen ◽  
M. Jacob-Mitos ◽  
P. Parikh ◽  
...  
Keyword(s):  
Power Density ◽  
Millimeter Wave ◽  
High Voltage ◽  
Gan Hemts

High power density SiGe millimeter-wave power amplifiers

2011 ◽  
Vol 3 (6) ◽  
pp. 615-620
Author(s):  
Thomas J. Farmer ◽  
Ali Darwish ◽  
Benjamin Huebschman ◽  
Edward Viveiros ◽  
Mona E. Zaghloul
Keyword(s):  
Power Density ◽  
Millimeter Wave ◽  
High Power ◽  
Silicon Germanium ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Two Stage ◽  
Chip Area ◽  
Power Added Efficiency

This paper presents measured results for two-stage and three-stage high-voltage/high-power (HiVP) amplifiers implemented in a commercial 0.12 μm silicon germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar Complementary Metal Oxide Semiconductor (BiCMOS) process at millimeter wave. The HiVP configuration provides a new tool for millimeter-wave silicon designers to achieve large output voltage swings, high output power density, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. The two-stage amplifier has achieved a PSAT = 5.41 dBm with a power added efficiency (PAE) of 8.06% at center frequency 30 GHz. The three-stage amplifier has achieved a PSAT = 8.85 dBm with a PAE of 11.35% with a total chip area of 0.068 mm2 at center frequency 30 GHz. Simulation, layout, fabrication, and measurement results are presented in this paper.

Sign in / Sign up

Export Citation Format

Share Document