Miniaturization of a broadband monopole antenna using low loss magneto-dielectric materials in VHF band

2017 ◽  
Author(s):  
A. Kabalan ◽  
A.-C. Tarot ◽  
A. Sharaiha
Keyword(s):  
Dielectric Materials ◽  
Monopole Antenna ◽  
Low Loss

Permittivity measurements of low-loss dielectric materials at 60 GHz

1996 ◽  
Author(s):  
Chriss A. Jones ◽  
John H. Grosvenor ◽  
Yehuda Kantor
Keyword(s):  
Dielectric Materials ◽  
60 Ghz ◽  
Low Loss ◽  
Permittivity Measurements

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

Measurement of Low-Loss Dielectric Materials Using Dielectric Rod Resonator

2007 ◽  
Vol 29 (1) ◽  
pp. 63-68 ◽  
Author(s):  
Li-Qiang Wang ◽  
Hong-Xing Zheng ◽  
Li-Ying Feng ◽  
Feng-You Gao
Keyword(s):  
Dielectric Materials ◽  
Low Loss

scholarly journals Theory and Experiment of Isotropic Electromagnetic Beam Bender Made of Dielectric Materials

2010 ◽  
Vol 150-151 ◽  
pp. 1508-1516 ◽  
Author(s):  
Qi Bo Deng ◽  
Jin Hu ◽  
Zheng Chang ◽  
Xiao Ming Zhou ◽  
Geng Kai Hu
Keyword(s):  
Electromagnetic Wave Propagation ◽  
Dielectric Materials ◽  
Deformation Tensor ◽  
Spatial Transformation ◽  
Low Loss ◽  
Material Parameters ◽  
Electromagnetic Beam ◽  
Reduced Parameters ◽  
Principal Stretches ◽  
Special Case

In this paper, we utilize the deformation transformation optics (DTO) method to design electromagnetic beam bender, which can change the direction of electromagnetic wave propagation as desire. According to DTO, the transformed material parameters can be expressed by deformation tensor of the spatial transformation. For a beam bender, since the three principal stretches at each point induced by the spatial transformation are independent to each other, there are many possibilities to simplify the transformed material parameters of the bender by adjusting the stretches independently. With the DTO method, we show that the reported reduced parameters of the bender obtained by equivalent dispersion relation can be derived as a special case. An isotropic bender is also proposed according to this method, and it is fabricated by stacking dielectric materials in layered form. Experiments validate the function of the designed isotropic bender for a TE wave; it is also shown that the isotropic bender has a broadband with low loss, compared with the metamaterial bender. The isotropic bender has much easier design and fabrication procedures than the metamaterial bender.

Development of Laser and Photodefinable Toughened Benzocyclobutene Dielectric Materials for 3D-TSV Integration

2013 ◽  
Vol 2013 (1) ◽  
pp. 000067-000071
Author(s):  
Zidong Wang ◽  
Michael Gallagher ◽  
Kevin Wang ◽  
Elissei Iagodkine ◽  
Mark Oliver ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Moisture Absorption ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Size Factor ◽  
Low Loss ◽  
Low Dielectric ◽  
Materials Used ◽  
Signal Routing ◽  
Stress Buffer

3D IC integration based on TSV technology has been recognized as a key enabler for next generation of electronic devices with reduced size factor and improved performances. The adoption of 3D-TSV technology also requires the development of innovative interconnect solutions that reduces the size of signal routing and therefore imposes new demands on dielectric materials used to isolate the copper interconnects. Benzocyclobutene polymers (Dow's CYCLOTENE™ Advanced Electronic Resins) have been used to isolate copper interconnects in packaging applications for more than 20 years, due to a number of good attributes of the BCB polymer including low copper drift rate, low dielectric constant and low loss, low moisture absorption and proven reliability. However, the low fracture toughness and low elongation of BCB polymer has limited its use in stress buffer applications due to solder bump failure. Here we report the development of new laser and photodefinable toughened benzocyclobutene (BCB) dielectric materials that have following improved properties and benefits over commercial materials including: 1) Higher elongation to break at 25%, 2) Higher fracture toughness, 3) Improved lithographic performance, < 8μm minimal size feature, 4) Better stability, no change in Eo after 30 days at room temperature. The patterning and integration of these toughened benzocyclobutene materials and the processing conditions are also discussed. We believe this toughened BCB material will find wide applications as a stress buffer layer in 3-D IC.

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